SILIICON PLANAR ZENER DIODES
BZX55B 4V7 - 68V
500mW
DO- 35
Glass Axial Package
Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the
hermetically sealed glass package with double studs provides excellent stability and reliability.
ABSOLUTE MAXIMUM RATINGS (T
j
=25°C)
SYMBOL
*P
D
T
j
T
stg
*R
th (j-a)
(1) On infinite heatsink with 4mm lead length.
Forward Voltage @ I
F
=200mA (BZX55B 4.7V - 27V)
V
F
Forward Voltage @ I
F
=200mA (BZX55B 30V - 68V)
V
F
ELECTRICAL CHARACTERISTICS (T
a
=25°C unless specified otherwise)
Device #
V
ZT
r
ZT
I
ZT
r
ZK
I
R
@
V
R
@ I
ZT
*
@ I
ZT
*
@
I
ZK
T
a
25°C 150°C
min max max max max max
(V) (V) (
ΩΩ
) (mA) (
ΩΩ
) (mA) (
µµ
A) (
µµ
A) (V)
BZX55B 4V7 4.60 4.80 80 5.0 600 (mA) 0.5 10 1.0
BZX55B 5V1 5.00 5.20 60 5.0 550 1.0 0.1 2.0 1.0
BZX55B 5V6 5.48 5.72 40 5.0 450 1.0 0.1 2.0 1.0
BZX55B 6V2 6.08 6.32 10 5.0 200 1.0 0.1 2.0 2.0
BZX55B 6V8 6.66 6.94 8 5.0 150 1.0 0.1 2.0 3.0
BZX55B 7V5 7.35 7.65 7 5.0 50 1.0 0.1 2.0 5.0
BZX55B 8V2 8.04 8.36 7 5.0 50 1.0 0.1 2.0 6.2
BZX55B 9V1 8.92 9.28 10 5.0 50 1.0 0.1 2.0 6.8
BZX55B 10 9.80 10.20 15 5.0 70 1.0 0.1 2.0 7.5
BZX55B 11 10.78 11.22 20 5.0 70 1.0 0.1 2.0 8.2
BZX55B 12 11.76 12.24 20 5.0 90 1.0 0.1 2.0 9.1
BZX55B 13 12.74 13.26 26 5.0 110 1.0 0.1 2.0 10
BZX55B 15
14.70 15.30 30 5.0 110 1.0 0.1 2.0 11
BZX55B 16
15.70 16.30 40 5.0 170 1.0 0.1 2.0 12
BZX55B 18
17.64 18.36 50 5.0 170 1.0 0.1 2.0 13
BZX55B 20
19.60 20.40 55 5.0 220 1.0 0.1 2.0 15
BZX55B 22
21.55 22.45 55 5.0 220 1.0 0.1 2.0 16
BZX55B 24
23.50 24.50 80 5.0 220 1.0 0.1 2.0 18
BZX55B 27
26.40 27.60 80 5.0 220 1.0 0.1 2.0 20
BZX55B 30
29.40 30.60 80 5.0 220 1.0 0.1 2.0 22
BZX55B 33
32.40 33.60 80 5.0 220 1.0 0.1 2.0 24
BZX55B 36
35.30 36.70 80 5.0 220 1.0 0.1 2.0 27
BZX55B 39
38.20 39.80 90 2.5 500 0.5 0.1 5.0 30
BZX55B 43
42.10 43.90 90 2.5 600 0.5 0.1 5.0 33
*Pulse Condition : 20ms
<
tp
<
50ms . Duty Cycle <2%
BZX55B4V7_68V Rev210105E
- 0.04 ~ 0.12
- 0.04 ~ 0.12
- 0.04 ~ 0.12
- 0.04 ~ 0.12
- 0.04 ~ 0.12
- 0.04 ~ 0.12
- 0.03 ~ 0.1
- 0.03 ~ 0.11
- 0.03 ~ 0.11
- 0.03 ~ 0.11
- 0.03 ~ 0.11
- 0.03 ~ 0.11
- 0.03 ~ 0.11
- 0.04 ~ 0.12
- 0.03 ~ 0.11
(%/K)
- 0.05 ~ + 0.02
- 0.02 ~ + 0.02
- 0.05 ~ + 0.05
- 0.03 ~ 0.06
- 0.03 ~ 0.07
- 0.03 ~ 0.07
- 0.03 ~ 0.08
- 0.03 ~ 0.09
°C
UNITDESCRIPTION
1.2
Power Dissipation
Junction Temperature
Storage Temperature
500
175
- 65 to +175
mW
°C
K/W
VALUE
- 0.04 ~ 0.12
1.5
V
V
Thermal Resistance Junction to Ambient
300
Zener Voltage
of
Temp. Coeff
Continental Device India Limited
Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILIICON PLANAR ZENER DIODES
BZX55B 4V7 - 68V
500mW
DO- 35
Glass Axial Package
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
Forward Voltage @ I
F
=200mA (BZX55B 4.7V - 27V)
V
F
Forward Voltage @ I
F
=200mA (BZX55B 30V - 68V)
V
F
Device #
V
ZT
r
ZT
I
ZT
r
ZK
I
R
@
V
R
@ I
ZT
*
@ I
ZT
*
@
I
ZK
T
a
25°C 150°C
min max max max max max
(V) (V) (
ΩΩ
) (mA) (
ΩΩ
) (mA) (
µµ
A) (
µµ
A) (V)
BZX55B 47 46.10 47.90 110 2.5 700 0.5 0.1 5.0 36
BZX55B 51 .50.00 52.00 125 2.5 700 0.5 0.1 10 39
BZX55B 56 54.90 57.10 135 2.5 1000 0.5 0.1 10 43
BZX55B 62 60.80 63.20 150 2.5 1000 0.5 0.1 10 47
BZX55B 68 66.60 69.40 200 2.5 1000 0.5 0.1 10 51
*Pulse Condition : 20ms < tp <50ms . Duty Cycle <2%
BZX55B4V7_68V Rev210105E
1.2 V
- 0.04 ~ 0.12
- 0.04 ~ 0.12
1.5 V
- 0.04 ~ 0.12
- 0.04 ~ 0.12
- 0.04 ~ 0.12
(%/K)
Temp. Coeff
of
Zener Voltage
Continental Device India Limited
Data Sheet Page 2 of 4