2
EMITTER
3
COLLECTOR
1
BASE
SEMICONDUCTOR
TECHNICAL DATA
2N3906S-AL
2022. 04. 21 1/5Revision No : 0
1. FEATURES
● We declare that the material of product compliance with
RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
4. THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC
Derate above 25ºC
Thermal Resistance,
Junction–to–Ambient(Note 1)
Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
Parameter Symbol Limits
General Purpose Transistors PNP Silicon
Device Marking Shipping
2N3906S-AL 2A 3000/Tape&Reel
Unit
Collector–Emitter Voltage VCEO -40 Vdc
Collector–Base Voltage VCBO -40 Vdc
225
Parameter Symbol Limits Unit
mW
1.8
556
Emitter–Base Voltage VEBO -5 Vdc
Collector Current — Contin
uous IC -200 mAdc
PD
RθJA
mW/ºC
ºC/W
−55~+150TJ,Tstg ºC
SOT-23
2022. 04. 21 2/5Revision No : 0
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = -1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = -10 μAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = -10 μAdc, IC = 0)
Collector Cutoff Current
( VCE = -30 Vdc, VEB = -3.0Vdc)
Base Cutoff Current
(VCE = -30 Vdc, VEB = -3.0Vdc)
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(IC = -10 mAdc, VCE = -1.0 Vdc)
(IC = -50 mAdc, VCE = -1.0 Vdc)
(IC = -100 mAd
c, VCE = -1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = -10mAdc, VCE= -20Vdc, f = 100MHz)
Output Capacitance
(VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
2.Pulse Test: Pu
lse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
(VCC = -3.0 Vdc,VBE=0.5Vdc,
IC = -10mAdc, IB1 = -1.0 mAdc)
(VCC = -3.0 Vdc, IC = -10
mAdc,IB1 = IB2 = -1.0 mAdc)
pF
ns
- - 35td
tr - - 35
ts - - 225
tf - - 75
V
V
nA
nA
V
V
MHz
30 - -
- - -0.25
- - -0.4
-0.65 - -0.85
- - -0.95
fT
250 - -
VBE(sat)
Cobo
Cibo
- - 4.5
- - 10
pF
Unit
VBR(CEO)
V
-40 - -
Symbol Min.
VBR(CBO)
-40 - -
VBR(EBO)
-5 - -
Typ. Max.
ICEX
- - -50
VCE(sat)
IBL
- - -50
HFE
60 -
80 - -
100 - 300
60 - -
-
2N3906S-AL