2
EMITTER
3
COLLECTOR
1
BASE
SEMICONDUCTOR
TECHNICAL DATA
2N3906S-AB
1. FEATURES
• Silicon PNP transistor in a SOT-23 Plastic Package
• High DC Current Gain, Low Collector to Emitter Saturation Voltage,
Qualified to AEC-Q101 Standards for High Reliability, HF Product.
• General purpose amplifier and switching, Meet the stringent requirements
of automotive applications
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
4. THERMAL CHARACTERISTICS
1. FR–5 = 1.0×0.75×0.062in.
General Purpose Transistors PNP Silicon
Device Marking Shipping
2N3906S-AB Q2A 3000/Tape&Reel
Parameter Symbol Limits Unit
Collector
–Emitter Voltage VCEO -40 Vdc
Collector
–BaseVoltage VCBO -40 Vdc
Emitter
–Base Voltage VEBO -5 Vdc
Collector Current
— Continuous IC -200 mAdc
Parameter Symbol Limits Unit
Total Device
Dissipation,
FR−5 Board (Note 1) @ TA =25ºC
Derate above 25ºC
PD
225
1.8
mW
m
W/º
C
Thermal
Resistance,
Junction
–to–Ambient(Note1)
RθJA 556 ºC/W
Junction and Storage
temperature TJ,Tstg
−55~+150
ºC
SOT-23
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5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2.)
SMALL–SIGNALCHARACTERISTICS
Characteristic
Symbol Min. Typ. Max. Unit
Collector
–Emitter Breakdown Voltage
(IC =
-1.0 mAdc, IB = 0)
VBR(CEO)
-40
- -
V
Collector
–Base Breakdown Voltage
(IC =
-10 μAdc, IE = 0)
VBR(CBO)
-40
- -
V
Emitter
–Base Breakdown Voltage
(IE =
-10 μAdc, IC = 0)
VBR(EBO)
-5
- -
V
Collec
tor ~ Base Leakage Current
( VCE =
-30 Vdc, IE = 0)
ICBO
- -
-50
nA
Emitter~ Base
Leakage Current
(VCE =
-3V, IC =0V)
IEBO
- -
-50
nA
DC Current
Gain
HFE
(IC =
-0.1 mAdc, VCE = -1.0 Vdc) 60 - -
(IC =
-1.0 mAdc, VCE = -1.0Vdc) 80 - -
(IC =
-10 mAdc, VCE = -1.0 Vdc) 100 - 300
(IC =
-50 mAdc, VCE = -1.0 Vdc) 60 - -
(IC =
-100 mAdc, VCE = -1.0Vdc) 30 - -
Collector
–Emitter Saturation Voltage
VCE(sat)
V
(IC =
-10 mAdc, IB = -1.0 mAdc) - - -0.25
(IC =
-50 mAdc, IB = -5.0 mAdc) - - -0.4
Base
–Emitter Saturation Voltage
VBE(sat)
V
(IC =
-10 mAdc, IB = -1.0 mAdc) -0.65 - -0.85
(IC =
-50 mAdc, IB = -5.0 mAdc) - - -0.95
Current
–Gain — Bandwidth Product
(IC =
-10mAdc, VCE= -20Vdc, f = 100MHz)
fT
250 - -
MHz
Output
Capacitance
(VCB =
-5.0 Vdc, IE = 0, f = 1.0MHz)
Cobo
- - 4.5
pF
WITCHING
CHARACTERISTICS
Delay
Time
(VCC = -3.0 Vdc,VBE=0.5Vdc,
IC =
-10mAdc, IB1 = -1.0 mAdc)
td - - 35
ns
Rise
Time tr - - 35
Storage
Time
(VCC = -3.0 Vdc, IC = -10
mAdc,IB1 = IB2 = -1.0mAdc)
ts - - 225
Fall Time tf - - 75
2N3906S-AB
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