COLLECTOR
3
1
BASE
2
EMITTER
SEMICONDUCTOR
TECHNICAL DATA
2N2222AS-AL
2022. 04. 21 1/6Revision No : 0
SOT-23
1. FEATURES
● We declare that the material of product compliance with
RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
4. THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC
Derate above 25ºC
Thermal Resistance,
Junction–to–Ambient(Note 1)
Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
−55~+150
TJ,Tstg
º
C
1.8
556
Emitter–Base Voltage VEBO 6
V
Collector Current — Continuous IC 600
mA
PD
RθJA
mW
mW/ºC
ºC/W
Collector–Emitter Voltage VCEO 40
V
Collector–Base Voltage VCBO 75
V
225
Parameter Symbol Limits Unit
Parameter Symbol Limits
General Purpose Transistors NPN Silicon
Device Marking Shipping
2N2222AS-AL 1P 3000/Tape&Reel
Unit
Junction–to–Case
300RθJC ºC/W
2N2222AS-AL
2022. 04. 21 2/6Revision No : 0
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 μA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 μA, IC = 0)
Collector Cutoff Current
(VCE = 60 V, VEB(off) = 3.0V)
Collector Cutoff Current
(VCB = 60 V, IE = 0)
(VCB = 60 V, IE = 0, TA = 125°C)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
Base Cutoff Current
(VCE = 60 V, VEB(off) = 3.0 V)
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(IC = 0.1 mA, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 1
0
V)
(IC = 10 mA, VCE = 10 V,TA= –55°C)
(IC = 150 mA, VCE = 10 V)
(IC = 150 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
Base–Emitter Saturation Voltage
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20mA, VCE= 20V, f = 100MHz)
Output Capacitance
(VCB = 5.0 V, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
ICEX
- - 10
VCE(sat)
IBL
- - 20
HFE
35 -
50 - -
75 - -
100 - 30
0
-
IC
BO
0.01
VBR(CBO)
75 - -
VBR(EBO)
6 - -
Typ. Max. Unit
VBR(CEO)
V
40 - -
Symbol Min.
- - 2
fT
300 - -
VBE(sat)
Cobo
Cibo
- - 8
- - 25
pF
V
V
nA
nA
V
V
MHz
40 - -
- - 0.3
- - 1
0.6 - 1.2
- - 10
- -
pF
μA
IEBO
nA
- - 100
50 - -
35 - -
Collector-Emitter cutoff Current
ICEO
- - 10
μA
(VCE 40V, IB=0)