COLLECTOR
3
1
BASE
2
EMITTER
SEMICONDUCTOR
TECHNICAL DATA
2N2222AS-AB
SOT-23
1. FEATURES
• Silicon NPN transistor in a SOT-23 Plastic Package
• Collector currents up to 600 mA, Qualified to AEC-Q101
Standards for High Reliability, HF Product
• General purpose amplifier, Meet the stringent requirements
of automotive applications
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
4. THERMAL CHARACTERISTICS
1. FR–5 = 1.0×0.75×0.062in.
General Purpose Transistors NPN Silicon
Device Marking Shipping
2N2222AS-AB Q1P 3000/Tape&Reel
Parameter Symbol Limits Unit
Collector
–Emitter Voltage VCEO 40
V
Collector
–BaseVoltage VCBO 75
V
Emitter
–Base Voltage VEBO 6
V
Collector Current
— Continuous IC 600
mA
Parameter Symbol Limits Unit
Total Device
Dissipation, PD
FR−5 Board (Note 1) @ TA = 25ºC 225 mW
Derate above 25ºC 1.8
mW/ºC
Thermal
Resistance,
Junction
–to–Ambient(Note 1)
RθJA 556 ºC/W
Junction
–to–Case
RθJC 300 ºC/W
Junction and Storage
temperature TJ,Tstg
−55~+150
º
C
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2N2222AS-AB
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2.)
SMALL–SIGNALCHARACTERISTICS
DC Current
Gain
(IC = 0.1
mA, VCE = 10V) 35 - -
(IC = 1.0
mA, VCE = 10V) 50 - -
(IC = 10
mA, VCE = 10V)
HFE
75 - -
(IC = 10
mA, VCE = 10 V,TA= –55°C) 35 - -
(IC = 150
mA, VCE = 10 V) 100 - 300
(IC = 150
mA, VCE = 1.0 V) 50 - -
(IC = 500
mA, VCE = 10 V) 40 - -
Collector
–Emitter Saturation Voltage
(IC = 150
mA, IB = 15mA)
VCE(sat)
- - 0.3
V
(IC = 500
mA, IB = 50mA) - - 1
Base
–Emitter Saturation Voltage
(IC = 150
mA, IB = 15mA)
VBE(sat)
0.6 - 1.2
V
(IC = 500
mA, IB = 50 mA) - - 2
Current
–Gain — Bandwidth Product
(IC = 20mA,
VCE= 20V, f = 100MHz)
fT
300 - -
MHz
Output Capacitance
(VCB = 10.0V, IE = 0, f = 1.0 MHz)
Cobo
- - 8
pF
Characteristic Symbol Min. Typ. Max. Unit
Collector
–Emitter Breakdown Voltage
(IC = 10
mA, IB = 0)
VBR(CEO)
40 - -
V
Collector
–Base Breakdown Voltage
(IC = 10 μA, IE =
0)
VBR(CBO)
75 - -
V
Emitter
–Base Breakdown Voltage
(IE = 10 μA, IC =
0)
VBR(EBO)
6 - -
V
Collector Cutoff
Current
(VCB = 60 V, IE =
0)
(VCB = 60 V, IE = 0, TA =
125°C)
ICBO
-
-
-
-
0.01
10
μA
Emitter Cutoff
Current
(VEB = 3.0 V, IC =
0)
IEBO
- - 100
nA
Collector
-Emitter cutoff Current
(VCE 40V,
IB=0)
ICEO
- - 10
μA
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