NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
•
Simplifies Circuit Design
•
Reduces Board Space and Component Count
Bias Resistor Transistor
SEMICONDUCTOR
TECHNICAL DATA
DTC123J
IN
GND
OUT
GND
OUT
R2
R1
IN 3
2
1
1
2
3
TO-92M
DIM
MILLIMETERS
A
B
C
D
E
F
G
3.25 MAX
4.20 MAX
0.48 MAX
1.52 0.1
1.27
15.30 0.20
0.76
45
0.51 MAX
H
J
AF
G
D
E E
H
J
C
K 0.25
K
B
+
_
+
_
1. EMITTER(GND)
2. COLLECTOR(Output)
3. BASE(Input)
Absolute maximum ratings(Ta=25 )
Parameter Symbol Value Unit
Supply voltage
V
CC
V
05
Input voltage
V
IN
V
-5 ~ 12
I
O
100
Output current
I
C(MAX)
001
mA
Power dissipation
Pd 300 mW
Junction temperature
T
j
051
℃
Storage temperature
051~55- gtsT
℃
Electrical characteristics (Ta=25℃)
Parameter Symbol Min. Typ Max. Unit Conditions
V
(off)
V0.5
CC
=5V ,I
O
=100µA
Input voltage
V
(on)
1.1
V
V
O
=0.3V ,I
O
=5mA
Output voltage
V
O(on)
/I
I
=5mA/0.25mA
Input current
I
I
Vi=5V
Output current
I
O(off)
Vcc=50V ,Vi=0
DC current gain
G
I
=5V ,I
O
=5mA
Input resistance
R
1
㏀
Resistance ratio
R
2
/R
1
2621 17
Transition frequency
f
T
Vo=10V ,Io=5㎃,f=100㎒
2012.01.30 1/2
Revision No : 0
Vo
80
1.54
2.2 2.86
Io
V
0.3
0.1
㎃
3.6
㎂
0.5
㎒ 250
Typical Characteristics
DTC123J
2012.01. 30 2/2
Revision No : 0
0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
0.1 1 10 100
0.1
1
10
100
11 10 00
10
100
1000
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
0 4 8 12 16 20
0
2
4
6
8
10
0.1 1 10 100
1
10
100
1000
30
3
0.3
T
a
=100℃
T
a
=25℃
OFF Characteristics
3
0.3
0.03
V
CC
=5V
OUTPUT CURRENT I
0
(mA)
INPUT VOLTAGE V
I(OFF)
(V)
ON Characteristics
T
a
=25℃
T
a
=100℃
V
O
=0.3V
3
0.3
30
OUTPUT CURRENT I
O
(mA)
INPUT VOLTAGE V
I(ON)
(V)
300
30
30
3
V
O(ON)
—— I
O
T
a
=25℃
T
a
=100℃
I
O
/I
I
=20
OUTPUT VOLTAGE V
O(ON)
(mV)
OUTPUT CURRENT I
O
(mA)
P
D
—— T
a
POWER DISSIPATION P
D
(mW)
AMBIENT TEMPERATURE T
a
( )℃
OUTPUT CAPACITANCE C
O
(pF)
f=1MHz
T
a
=25℃
C
O
—— V
R
REVERSE BIAS VOLTAGE V
R
(V)
30
T
a
=25℃
T
a
=100℃
V
O
=5V
300
3
30.3
30
G
I
—— I
O
OUTPUT CURRENT I
O
(mA)
DC CURRENT GAIN G
I