S9015
TRANSISTOR (PNP)
FEATURES
z
Complementary to S9014
MARKING: M6
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -50 V
V
CEO
Collector-Emitter Voltage -45 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -0.1 A
P
C
Collector Power Dissipation 0.2 W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100
μ
A, I
E
=0
-50 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -0.1mA, I
B
=0 -45 V
Emitter-base breakdow n voltage
V
(BR)EBO
I
E
=-100
μ
A, I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-50 V, I
E
=0 -0.1
μA
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0 -0.1
μ
A
DC current gain
h
FE
V
CE
=-5V, I
C
= -1mA 200 1000
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-100mA, I
B
= -10mA -0.3 V
Base-emitter saturation voltage
V
BE
(sat) I
C
=-100mA, I
B
=-10mA -1 V
Transition frequency
f
T
V
CE
=-5V, I
C
= -10mA
f=
30MHz
150 MHz
CLASSIFICATION OF h
FE
Rank
L H
Range
200-450 450-1000
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
B,Dec,2011
SOT-23 Plastic-Encapsulate Transistors
DONGGUAN NANJING ELECTRONICS LTD.,
-0.1 -1 -10
1
10
-0.1 -1 -10 -100
10
100
1000
0 25 50 75 100 125 150
0
50
100
150
200
250
-0 -2 -4 -6 -8
-0
-2
-4
-6
-8
-0.1 -1 -10 -100
10
100
1000
-1 -10 -100
-0.1
-1
-0.0 -0.3 -0.6 -0.9 -1.2
-0.1
-1
-10
-100
-1 -10 -100
-0.01
-0.1
-1
-20
f=1MHz
I
E
=0/I
C
=0
T
a
=25 ℃
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ob
C
ib
CAPACITANCE C (pF)
REVERSE VOLTAGE V
R
(V)
30
COMMON EMITTER
V
CE
=-5V
T
a
=25℃
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
P
C
—— T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
AMBIENT TEMPERATURE T
a
( )℃
-6uA
-8uA
-10uA
-12uA
-16uA
-20uA
-18uA
-14uA
COMMON
EMITTER
T
a
=25℃
-4uA
I
B
=-2uA
Static Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COMMON EMITTER
V
CE
= -5V
I
C
T
a
=25℃
T
a
=100℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
-0.2
-0.2
I
C
f
T
——
h
FE
——
β=10
I
C
V
BEsat
——
T
a
=100℃
T
a
=25℃
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)
-2
COMMON EMITTER
V
CE
=-5V
S9015
Typical Characterisitics
V
BE
I
C
——
T
a
=100℃
T
a
=25℃
COLLECTOR CURRENT I
C
(mA)
BASE-EMMITER VOLTAGE V
BE
(V)
β=10
T
a
=100℃
T
a
=25℃
I
C
V
CEsat
——
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
COLLECTOR CURRENT I
C
(mA)
B,Dec,2011