SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

SOT-89-3L Plastic-Encapsulate Transistors

2SA1213 TRANSISTOR (PNP)

FEATURES

z Complementary to 2SC2873

z Small Flat Package

z Power Amplifier and Switching Applications

z Low Saturation Voltage

z High Speed Switching Time

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

V

(BR)CBO

I

C

= -0.1mA,I

E

=0 -50 V

Collector-emitter breakdown voltag e

V

(BR)CEO

I

C

=-10mA,I

B

=0 -50 V

Emitter-base breakdow n voltage

V

(BR)EBO

I

E

=-0.1mA,I

C

=0 -5 V

Collector cut-off current

I

CBO

V

CB

=-50V,I

E

=0 -100 nA

Emitter cut-off current

I

EBO

V

EB

=-5V,I

C

=0 -100 nA

V

CE

=-2V, I

C

=-500mA 70 240

DC current gain

h

FE

V

CE

=-2V, I

C

=-2A 20

Collector-emitter saturation voltage

V

CE(sat)

I

C

=-1A,I

B

=-50mA

-0.5 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=-1A,I

B

=-50mA

-1.2 V

Collector output capacitance C

ob

V

CB

=-10V,I

E

=0, f=1MHz

40 pF

Transition frequency

f

T

VCE=-2V,IC= -0.5A 100

MHz

CLASSIFICATION OF h

FE

RANK

O Y

RANGE

70–140 120–240

MARKING

NO NY

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage -50 V

V

CEO

Collector-Emitter Voltage -50 V

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current -2 A

P

C

Collector Power Dissipation 500 mW

R

θJA

Thermal Resistance From Junction To Ambient 250

℃/W

T

j

Junction Temperature 150

℃

T

stg

Storage Temperature -55~+150

℃

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0 25 50 75 100 125 150

0

100

200

300

400

500

600

-1 -10 -100 -1000

10

100

1000

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0

-1

-10

-100

-1000

-0.1 -1 -10

10

100

1000

-1 -10 -100 -1000

-1000

-1 -10 -100 -1000

-10

-100

-1000

-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5

-0

-200

-400

-600

-800

-1000

P

C

—— T

a

COLLECTOR POWER DISSIPATION

P

C

(mW)

AMBIENT TEMPERATURE T

a

( )℃

-2000

30

-3

T

a

=100 ℃

T

a

=25 ℃

COMMON EMITTER

V

CE

=-2V

h

FE

—— I

C

300

-500-30

DC CURRENT GAIN h

FE

COLLECTOR CURRENT I

C

(mA)

T

a

=100 ℃

T

a

=25 ℃

-300

-30

-3

I

C

—— V

BE

V

CE

=-2V

COLLECTOR CURRENT I

C

(mA)

BASE-EMITTER VOLTAGE V

BE

(V)

300

30

C

ob

C

ib

-0.3

-20

-3

f=1MHz

I

E

=0/I

C

=0

T

a

=25 ℃

C

ob

/C

ib

—— V

CB

/V

EB

CAPACITANCE C (pF)

REVERSE VOLTAGE V (V)

-300

-200

-3

T

a

=100 ℃

T

a

=25 ℃

β=20

-30

V

BEsat

—— I

C

BASE-EMMITTER SATURATION

VOLTAGE V

BEsat

(mV)

COLLECTOR CURRENT I

C

(mA)

β=20

2SA1213

Typical Characterisitics

-3

T

a

=100 ℃

-300

-30

-300

-30

V

CEsat

—— I

C

T

a

=25 ℃

COLLECTOR-EMMITTER SATURATION

VOLTAGE V

CEsat

(mV)

COLLECTOR CURRENT I

C

(mA)

COMMON

EMITTER

T

a

=25 ℃

-6mA

-5.4mA

-4.8mA

-4.2mA

-3.6mA

-3mA

-2.4mA

-1.8mA

-1.2mA

I

B

=-600uA

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

COLLECTOR CURRENT I

C

(mA)

Static Characteristic

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