SOT-23 Plastic-Encapsulate Transistors
S9014
TRANSISTOR (NPN)
FEATURES
z
Complementary to S9015
MARKING: J6
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 50 V
V
CEO
Collector-Emitter Voltage 45 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 0.1 A
P
C
Collector Power Dissipation 0.2 W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V
(BR)CBO
I
C
= 100
μ
A, I
E
=0 50 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
= 0.1mA, I
B
=0 45 V
Emitter-base breakdow n voltage V
(BR)EBO
I
E
=100
μ
A, I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
=50 V , I
E
=0 0.1
μ
A
Collector cut-off current I
CEO
V
CE
=35V , I
B
=0 0.1 μA
Emitter cut-off current I
EBO
V
EB
= 3V , I
C
=0 0.1
μ
A
DC current gain h
FE
V
CE
=5V, I
C
= 1mA 200 1000
Collector-emitter saturation voltage V
CE
(sat) I
C
=100 mA, I
B
= 5mA 0.3 V
Base-emitter saturation voltage V
BE
(sat) I
C
=100 mA, I
B
= 5mA 1 V
Transition frequency
f
T
V
CE
=5V, I
C
= 10mA
f=
30MHz
150 MHz
CLASSIFICATION OF h
FE
Rank
L H
Range
200-450 450-1000
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
B,Dec,2011
DONGGUAN NANJING ELECTRONICS LTD.,
0.1 1 10
0.1
1
10
100
0 25 50 75 100 125 150
0
50
100
150
200
250
0.0 0.3 0.6 0.9 1.2
0.1
1
10
100
02468
0
2
4
6
8
0.1 1 10 100
0.1
1
0.1 1 10 100
10
100
1000
0.1 1 10 100
0.01
0.1
1
0.1 1 10 100
1
10
100
1000
f=1MHz
I
E
=0/I
C
=0
T
a
=25 ℃
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ob
C
ib
CAPACITANCE C (pF)
REVERSE VOLTAGE V
R
(V)
P
C
—— T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
AMBIENT TEMPERATURE T
a
( )℃
COMMON EMITTER
V
CE
= 5V
V
BE
I
C
——
T
a
=100℃
T
a
=25℃
COLLECTOR CURRENT I
C
(mA)
BASE-EMMITER VOLTAGE V
BE
(V)
20uA
COMMON
EMITTER
T
a
=25℃
18uA
16uA
14uA
12uA
10uA
8uA
6uA
4uA
I
B
=2uA
Static Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
20
f
T
——
h
FE
——
β=20
I
C
V
BEsat
——
T
a
=100℃
T
a
=25℃
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)
2
COMMON EMITTER
V
CE
= 5V
S9014
Typical Characterisitics
I
C
I
C
T
a
=25℃
T
a
=100℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
β=20
T
a
=100℃
T
a
=25℃
I
C
V
CEsat
——
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
COLLECTOR CURRENT I
C
(mA)
COMMON EMITTER
V
CE
=5V
T
a
=25℃
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
B,Dec,2011