1
FEATURES
• 175 °C Junction Temperature
•
Material categorizatio n:
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t 10 s.
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
60
0.0042
at V
GS
= 4.5 V
11
0
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless othe rwis e no te d)
Parameter Symbol Limit Unit
Gate-Source Voltage
V
GS
± 20 V
Continuous Drain Current (T
J
= 175 °C)
b
T
C
= 25 °C
I
D
A
T
C
= 100 °C
110
a
Pulsed Drain Current
I
DM
Continuous Source Current (Diode Conduction)
I
S
Avalanche Current
I
AS
110
Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH
E
AS
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
W
T
A
= 25 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter UnitMaximumTypicalSymbol
Maximum Junction-to-Ambient
a
t 10 sec
R
thJA
18
°C/W
Steady State
Maximum Junction-to-Case
R
thJC
N
-Channel 60 V (D-S) Super Junction Power MOSFET
TO-220AB
Top V iew
GDS
•
DT-Trench
Power MOSFET
DTP6003SJA
www.din-tek.jp
0.0
026
at V
GS
= 10
V
150
150
600
150
a
750
210
3.5
b
, 9.2
b,
c
13
35
0.8
45
1.0
2
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functional operatio n
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
a
UnitMax.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
nA± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V
1
µA
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 48 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
b
I
D(on)
V
DS
=5 V, V
GS
= 10 V
A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 10 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 15 A
0.0050
Forward Transconductance
b
g
fs
V
DS
= 48 V, I
D
= 20 A
50
S
Dynamic
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 48 V, f = 1 MHz
3950
pFOutput Capacitance
C
oss
670
Re
v
erse T
r
ansf
e
r Capacitance
C
rss
23
T
o
tal Gate Charge
c
Q
g
V
DS
= 48
V
,
V
GS
= 10
V
,
I
D
= 20
A
67
78
nC
Gate-S
o
u
rce Charge
c
Q
gs
12
Gate-Drain Charge
c
Q
gd
8.5
Turn-On Delay Time
c
t
d(on)
V
DD
= 48 V, R
L
= 0.6
I
D
20
A, V
GEN
= 10
V
,
R
g
= 2.5
10
2
0
ns
Rise Time
c
t
r
5 15
Turn-Off Delay Time
c
t
d(off)
55 70
Fall Time
c
t
f
12 20
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
Pulsed Current
I
SM
A
Diode Forward Voltage
V
SD
I
F
= 20 A, V
GS
= 0 V
1 V
Reverse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/µs
ns10045
0.0042
2.5
1.2
DTP6003SJA
www.din-tek.jp
150
0.0026 0.0032
0.0032 0.0041
0.0036 0.0048
150