1
FEATURES
• 175 °C Junction Temperature
•
Material categorizatio n:
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t 10 s.
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
60
0.0
022
at V
GS
= 10
V
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless othe rwis e no te d)
Parameter Symbol Limit Unit
Gate-Source Voltage
V
GS
± 20 V
Continuous Drain Current (T
J
= 175 °C)
b
T
C
= 25 °C
I
D
A
T
C
= 100 °C
Pulsed Drain Current
I
DM
Continuous Source Current (Diode Conduction)
I
S
Avalanche Current
I
AS
110
Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH
E
AS
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
W
T
A
= 25 °C
3
b
, 8.5
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter UnitMaximumTypicalSymbol
Maximum Junction-to-Ambient
a
t 10 sec
R
thJA
15
°C/W
Steady State
40 50
Maximum Junction-to-Case
R
thJC
1.10.85
N
-Channel 60 V (D-S) Super Junction Power MOSFET
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GDS
•
DT-Trench
Power MOSFET
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DTP6002SJ
TO-220AB
19
0
190
170
a
190
a
760
570
205
20
2
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functional operatio n
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
a
UnitMax.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
nA± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V
1
µA
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 48 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
b
I
D(on)
V
DS
=5 V, V
GS
= 10 V
A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 10 A, T
J
= 175 °C
Forward Transconductance
b
g
fs
V
DS
= 48 V, I
D
= 20 A
S
Dynamic
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 48 V, f = 1 MHz
pFOutput Capacitance
C
oss
Re
v
erse T
r
ansf
e
r Capacitance
C
rss
T
o
tal Gate Charge
c
Q
g
V
DS
= 48
V
,
V
GS
= 10
V
,
I
D
= 20
A
nC
Gate-S
o
u
rce Charge
c
Q
gs
Gate-Drain Charge
c
Q
gd
Turn-On Delay Time
c
t
d(on)
V
DD
= 48 V, R
L
= 0.6
I
D
20
A, V
GEN
= 10
V
,
R
g
= 2.5
2
0
ns
Rise Time
c
t
r
15
Turn-Off Delay Time
c
t
d(off)
70
Fall Time
c
t
f
20
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
Pulsed Current
I
SM
A
Diode Forward Voltage
V
SD
I
F
= 20 A, V
GS
= 0 V
V
Reverse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/µs
ns10045
1.2
www.din-tek.jp
DTP6002SJ
190
0.0022 0.0030
0.0029
0.0035
0.0039
0.0043
55
8560
1150
73
65
73
11
8
11
6
51
13
0.8
760
3.5