1
N-Channel 40 V (D-S) MOSFET
FEATURES
• 100%R
g
andUISTested
• ComplianttoRoHSDirective2002/95/EC
APPLICATIONS
• PowerSupply
-SecondarySynchronousRectification
• DC/DCConverter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) I
D
(A) Q
g
(Typ.)
40
0.0127atV
GS
=10V
55
d
19.5
0.0147atV
GS
=4.5V
45
d
Notes:
a. Dutycycle≤1%.
b. SeeSOAcurveforvoltagederating.
c. Whenmountedon1"squarePCB(FR-4material).
d. Packagelimited.
ABSOLUTE MAXIMUM RATINGST
C
=25°C,unlessotherwisenoted
Parameter Symbol Limit Unit
Drain-SourceVoltage
V
DS
40
V
Gate-SourceVoltage
V
GS
±20
ContinuousDrainCurrent(T
J
=150°C)
T
C
=25°C
I
D
55
d
A
T
C
=70°C
45
d
PulsedDrainCurrent
I
DM
165
AvalancheCurrent
I
AS
34
SingleAvalancheEnergy
a
L=0.1mH
E
AS
78 mJ
MaximumPowerDissipation
a
T
C
=25°C
P
D
55.5
b
W
T
A
=25°C
c
2.7
OperatingJunctionandStorageTemperatureRange
T
J
,T
stg
-55to150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient(PCBMount)
c
R
thJA
54
°C/W
Junction-to-Case(Drain)
R
thJC
2.7
SG D
TopView
www.din-tek.jp
DTU09N04
• DT-Trench Power MOSFET
2
Notes:
a. Pulsetest;pulsewidth≤300µs,dutycycle≤2%.
b. Guaranteedbydesign,notsubjecttoproductiontesting.
c. Independentofoperatingtemperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONST
J
=25°C,unlessotherwisenoted
Parameter Symbol Test Conditions TMin. y UnitMax.p.
Static
VDrain-SourceBreakdownVoltage
DS
V
DS
=0V,I
D
=250µA 40
V
GateThresholdVoltage V
GS(th)
V
DS
=V
GS
,I
D
=250µA 1 2.5
Gate-BodyLeakage I
GSS
V
DS
=0V,V
GS
=±20V nA±250
ZeroGateVoltageDrainCurrent I
DSS
1
µA
50
250
On-StateDrainCurrent
a
I
D(on)
V
DS
≥10V,V
GS
=10V 55 A
Drain-SourceOn-StateResistance
a
R
DS(on)
V
GS
=10V
,
I
D
=22A
0.0127
Ω
V
GS
=4.5V,I
D
=20A 0.0147
ForwardTransconductance
a
g
fs
V
DS
=15V,I
D
=20A 100 S
Dynamic
b
InputCapacitance C
iss
pFOutputCapacitance C
oss
ReverseTransferCapacitance C
rss
TotalGateCharge
c
Q
g
34 56
nC
20.1 30.2
Gate-SourceCharge
c
Q
gs
6
Gate-DrainCharge
c
Q
gd
5.7
GateResistance R
g
f=1MHz 420.4 Ω
Turn-OnDelayTime
c
t
d(on)

18
6
ns
RiseTime
c
t
r
189
Turn-OffDelayTime
c
t
d(off)
5335
FallTime
c
t
f
189
Drain-Source Body Diode Ratings and CharacteristicsT
C
=25 °C
b
ContinuousCurrent I
S
55
A
PulsedCurrent I
SM
165
ForwardVoltage
a
V
SD
I
F
=10A,V
GS
=0V V1.50.75
ReverseRecoveryTime t
rr
I
F
=10A,dI/dt=100A/µs
3
4
51
ns
PeakReve IrseRecoveryCurrent
RM(
REC)
32 A
Re
verseReco
v
e
r
y
Charge Q
rr
nC5134
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DTU09N04
0.017
0.015
992
176
91
V
DS
=40V,V
GS
=0V
V
DS
=32V,V
GS
=0V,T
J
=125°C
V
DS
=32V,V
GS
=0V,T
J
=150°C
V
GS
=0V,V
DS
=20V,f=1MHz
V
DS
=20V,V
GS
=10V,I
D
=20A
V
DS
=20V,V
GS
=4.5V,I
D
=20A
V
DD
=20V,R
L
=1.5ΩI
D
≅10A,V
GEN
=10V,R
g
=1Ω