Liown Semiconductor Co.,Ltd. 浙江省玉环市半导体科技产业园
里阳半导体有限公司 Tel:0576-8071-1338 Fax:0576-8071-1339
www.liownsemi.com 掌握芯技术 Core Technology （V1）
5.0SMDJ Series Datasheet
Description
The 5.0SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events. For surface mounted applications in order to optimize board
space.
Features
⚫ Halogen free and RoHS compliant
⚫ Low profile package
⚫ Built-in strain relief Design
⚫ Low inductance
⚫ Excellent clamping capability
⚫ 5000W peak pulse power capability at 10/1000μs waveform,
repetition rate (duty cycle): 0.01%
⚫ Fast response time: typically less than 1.0ps from 0V to VB min
⚫ Typical IR less than 2μA above 20V
⚫ Peak 260℃ high temperature Reflow Soldering withstanding
⚫ Meet MSL level1, per J-STD-020
⚫ IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact)
⚫ Unit Weight: 0.30g/PCS
Applications
TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in
telecom, computer, Industrial and consumer electronic applications.
Maximum Ratings and Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Rating
Symbol
Value
Units
Peak pulse power dissipation at 10/1000μs waveform
(Note1, Note2, Fig.1)
P
PPM
Minimum 5000
Watts
Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3)
I
PPM
See Table
Amps
Steady state power dissipation at T
A
=50℃ (Fig.5)
P
M(AV)
6.5
Watts
Maximum Instantaneous Forward Voltage at 100A for
Unidirectional Only
V
F
3.5/5.0
V
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load, (JEDEC Method) (Note3, Fig.6)
I
FSM
300
Amps
Operating junction and Storage Temperature Ranges.
T
J
,T
STG
-55 to +150
℃
Typical thermal resistance junction to lead
R
θJL
15
℃/W
Typical thermal resistance junction to ambient
R
θJA
75
℃/W
Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above T
A
=25℃ per Fig.2.
2. Each terminal is surface Mounted on the 8.0mm×8.0mm copper pads.
3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum.
4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.
Liown Semiconductor Co.,Ltd. 浙江省玉环市半导体科技产业园
里阳半导体有限公司 Tel:0576-8071-1338 Fax:0576-8071-1339
www.liownsemi.com 掌握芯技术 Core Technology （V1）
Dimensions (SMC/DO-214AB)
Electrical Characteristics (TA=25℃)
Part Number
Device
Marking
Code
Breakdown
Voltage
@I
T
Test
Current
Maximum
Clamping
Voltage
@I
PP
Peak
Pulse
Current
Reverse
Leakage
@V
R
Unidirectional
Bidirectional
UNI
BI
Min(V)
Max(V)
I
T
(mA)
V
C
(V)
I
PP
(A)
I
R
(μA)
5.0SMDJ11A
5.0SMDJ11CA
5PEN
5BEN
12.20
13.50
10
18.2
275.0
800
5.0SMDJ12A
5.0SMDJ12CA
5PEP
5BEP
13.30
14.70
10
19.9
252.0
800
5.0SMDJ13A
5.0SMDJ13CA
5PEQ
5BEQ
14.40
15.90
10
21.5
233.0
500
5.0SMDJ14A
5.0SMDJ14CA
5PER
5BER
15.60
17.20
10
23.2
216.0
200
5.0SMDJ15A
5.0SMDJ15CA
5PES
5BES
16.70
18.50
1
24.4
205.0
100
5.0SMDJ16A
5.0SMDJ16CA
5PET
5BET
17.80
19.70
1
193.0
50
5.0SMDJ17A
5.0SMDJ17CA
5PEU
5BEU
18.90
20.90
1
181.0
20
5.0SMDJ18A
5.0SMDJ18CA
5PEV
5BEV
20.00
22.10
1
172.0
10
5.0SMDJ20A
5.0SMDJ20CA
5PEW
5BEW
22.20
24.50
1
155.0
5
5.0SMDJ22A
5.0SMDJ22CA
5PEX
5BEX
24.40
26.90
1
141.0
5
5.0SMDJ24A
5.0SMDJ24CA
5PEZ
5BEZ
26.70
29.50
1
129.0
2
5.0SMDJ26A
5.0SMDJ26CA
5PFE
5BFE
28.90
31.90
1
119.0
2
5.0SMDJ28A
5.0SMDJ28CA
5PFG
5BFG
31.10
34.40
1
110.0
2
5.0SMDJ30A
5.0SMDJ30CA
5PFK
5BFK
33.30
36.80
1
103.0
2
5.0SMDJ33A
5.0SMDJ33CA
5PFM
5BFM
36.7
40.6
1
93.9
2
5.0SMDJ36A
5.0SMDJ36CA
5PFP
5BFP
40.0
44.2
1
86.1
2
5.0SMDJ40A
5.0SMDJ40CA
5PFR
5BFR
44.4
49.1
1
77.6
2
5.0SMDJ43A
5.0SMDJ43CA
5PFT
5BFT
47.8
52.8
1
72.1
2