Liown Semiconductor Co.,Ltd. ��江省玉环市半导体科技产业园
里阳半导体有限公司 Tel:0576-8071-1338 Fax:0576-8071-1339
www.liownsemi.com 掌握芯技术 Core Technology （V1）
8.0SMDJ Series Datasheet
Description
The 8.0SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events. For surface mounted applications in order to optimize board
space.
Features
⚫ Halogen free and RoHS compliant
⚫ Low profile package
⚫ Built-in strain relief Design
⚫ Low inductance
⚫ Excellent clamping capability
⚫ 8000W peak pulse power capability at 10/1000μs waveform,
repetition rate (duty cycle): 0.01%
⚫ Fast response time: typically less than 1.0ps from 0V to VB min
⚫ Typical IR less than 2μA above 22V devices
⚫ Peak 260℃ high temperature Reflow Soldering withstanding
⚫ Meet MSL level1, per J-STD-020
⚫ Unit Weight: 0.30g/PCS
Applications
TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in
telecom, computer, Industrial and consumer electronic applications.
Maximum Ratings and Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Rating
Symbol
Value
Units
Peak pulse power dissipation at 10/1000μs waveform
(Note1, Note2, Fig.1)
P
PPM
Minimum 8000
Watts
Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3)
I
PPM
See Table
Amps
Steady state power dissipation at T
A
=50℃ (Fig.5)
P
M(AV)
6.5
Watts
Maximum Instantaneous Forward Voltage at 100A for
Unidirectional Only
V
F
3.5/5.0
V
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load, (JEDEC Method) (Note3, Fig.6)
I
FSM
300
Amps
Operating junction and Storage Temperature Ranges.
T
J
,T
STG
-55 to +150
℃
Typical thermal resistance junction to lead
R
θJL
15
℃/W
Typical thermal resistance junction to ambient
R
θJA
75
℃/W
Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above T
A
=25℃ per Fig.2.
2. Each terminal is surface Mounted on the 8.0mm×8.0mm copper pads.
3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum.
4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.
Liown Semiconductor Co.,Ltd. 浙江省玉环市半导体科技产业园
里阳半导体有限公司 Tel:0576-8071-1338 Fax:0576-8071-1339
www.liownsemi.com 掌握芯技术 Core Technology （V1）
Dimensions (SMC/DO-214AB)
Electrical Characteristics (TA=25℃)
Part Number
Reverse
Stand-Off
Voltage
Breakdown
Voltage
@I
T
Test
Current
Maximum
Clamping
Voltage
@I
PP
Peak
Pulse
Current
Reverse
Leakage
@V
R
Unidirectional
Bidirectional
UNI
BI
V
R
(V)
Min(V)
Max(V)
I
T
(mA)
V
C
(V)
I
PP
(A)
I
R
(μA)
8.0SMDJ11A
8.0SMDJ11CA
8PEN
8BEN
11.0
12.20
13.50
10
18.2
440.0
800
8.0SMDJ12A
8.0SMDJ12CA
8PEP
8BEP
12.0
13.30
14.70
10
19.9
402.1
800
8.0SMDJ13A
8.0SMDJ13CA
8PEQ
8BEQ
13.0
14.40
15.90
10
21.5
372.1
500
8.0SMDJ14A
8.0SMDJ14CA
8PER
8BER
14.0
15.60
17.20
10
23.2
344.9
200
8.0SMDJ15A
8.0SMDJ15CA
8PES
8BES
15.0
16.70
18.50
1
24.4
327.9
100
8.0SMDJ16A
8.0SMDJ16CA
8PET
8BET
16.0
17.80
19.70
1
26.0
307.7
50
8.0SMDJ17A
8.0SMDJ17CA
8PEU
8BEU
17.0
18.90
20.90
1
27.6
290.0
20
8.0SMDJ18A
8.0SMDJ18CA
8PEV
8BEV
18.0
20.00
22.10
1
29.2
274.0
10
8.0SMDJ20A
8.0SMDJ20CA
8PEW
8BE
W
20.0
22.20
24.50
1
32.4
247.0
5
8.0SMDJ22A
8.0SMDJ22CA
8PEX
8BEX
22.0
24.40
26.90
1
35.5
225.4
5
8.0SMDJ24A
8.0SMDJ24CA
8PEZ
8BEZ
24.0
26.70
29.50
1
38.9
205.7
2
8.0SMDJ26A
8.0SMDJ26CA
8PFE
8BFE
26.0
28.90
31.90
1
42.1
190.1
2
8.0SMDJ28A
8.0SMDJ28CA
8PFG
8BFG
28.0
31.10
34.40
1
45.4
176.2
2
8.0SMDJ30A
8.0SMDJ30CA
8PFK
8BFK
30.0
33.30
36.80
1
48.4
165.3
2
8.0SMDJ33A
8.0SMDJ33CA
8PFM
8BFM
33.0
36.7
40.6
1
53.3
150.1
2
8.0SMDJ36A
8.0SMDJ36CA
8PFP
8BFP
36.0
40.0
44.2
1
58.1
137.8
2