Absolute Maximum Ratings
(Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
DSS
Drain-Source Voltage 650 V
I
D
Drain Current
T
j
=25℃
7.0
A
T
j
=100℃
4.7
V
GS(TH)
Gate Threshold Voltage ±30 V
E
AS
Single Pulse Avalanche Energy (note1) 420 mJ
I
AR
Avalanche Current (note2) 7.0 A
P
D
Power Dissipation (Tj=25℃)
50 W
T
j
Junction Temperature(Max) 150
℃
T
stg
Storage Temperature -55~+150
℃
TL
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
300
℃
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
R
JC
Thermal Resistance,Junction to Case - 2.50
℃/W
R
JA
Thermal Resistance,Junction to Ambient - 120
℃/W
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=29nC (Typ.).
□
BVDSS=650V,I
D
=7A
□
R
DS
(on) : 1.2 (Max) @V
G
=10V
□
100% Avalanche Tested
S
G
D
PIN Connection TO-220F
Marking Diagram
A = Assembly Location
Y = Year
WW = Work Week
= Specific Device Code
FIR7N65F
FIR7N65F
YAWWVT
VT = Version & Thickness
G
D
S
g
Schematic dia ram
Electrical Characteristics
(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250A，V
GS
=0
650 - - V
△
BVDSS/
△
TJ
Breakdown Voltage Temperature
Coefficient
I
D
=250A ,Reference
to 25℃
- 0.67 -
V/℃
I
DSS
Zero Gate Voltage Drain Current
V
DS
=650V, V
GS
=0V - - 10
A
V
DS
=520V, Tj=125℃
100
I
GSSF
Gate-body leakage Current,
Forward
V
GS
=+30V, V
DS
=0V - - 100
nA
I
GSSR
Gate-body leakage Current,
Reverse
V
GS
=-30V, V
DS
=0V - - -100
On Characteristics
V
GS(TH)
Date Threshold Voltage I
D
=250A,V
DS
=V
GS
2 - 4 V
R
DS(ON)
Static Drain-Source
On-Resistance
I
D
=3.5A,V
GS
=10V - - 1.2
Dynamic Characteristics
Ciss Input Capacitance
V
DS
=25V，V
GS
=0，
f=1.0MHz
- 1100 1430
pF
Coss Output Capacitance - 135 175
Crss
Reverse Transfer Capacitance - 16 21
Switching Characteristics
Td(on) Turn-On Delay Time
V
DD
=325V，I
D
=7A
R
G
=25 (Note 3,4)
- 30 70
ns
Tr Turn-On Rise Time - 80 170
Td(off) Turn-Off Delay Time
- 65 140
Tf Turn-Off Rise Time - 60 130
Qg Total Gate Charge
V
DS
=520V,V
GS
=10V，
I
D
=7A (Note 3,4)
- 29 38
nC
Qgs Gate-Source Charge
- 7 -
Qgd Gate-Drain Charge
- 14.5 -
Drain-Source Diode Characteristics and Maximum Ratings
Is Max. Diode Forward Current
- - - 7
A
I
SM
Max. Pulsed Forward Current
- - - 28
V
SD
Diode Forward Voltage I
D
=7A - - 1.4 V
Trr Reverse Recovery Time
I
S
=7A,V
GS
=0V
diF/dt=100A/s
(Note3)
- 320 - s
Qrr Reverse Recovery Charge
- 2.4 - C
Notes : 1, L=17.1mH, IAS=7A, VDD=50V, RG=25, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width 300s, Duty Cycle 2%
4, Essentially Independent of Operating Temperature
FIR7N65FG