1
AUTOMOTIVE MOSFET
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 3.7mΩ
I
D
= 75A
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
S
D
G
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Features
IRF1404ZPbF
D
2
Pak
IRF1404ZSPbF
TO-220AB
IRF1404ZPbF
TO-262
IRF1404ZLPbF
Absolu te Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Th erma lly limit ed)
Single Pulse Avalanche Energy
d
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
h
I
AR
Av alanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junct ion-to-Case
–––
0.75
k
°C/W
R
θ
CS
Case-to-Sink, Flat Greased Surface
i
0.50 –––
R
θ
JA
Junct ion-to-Ambient
i
––– 62
R
θ
JA
Junct ion-to-Ambient (PCB Mount)
j
––– 40
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1 .1 N
y
m)
200
1.3
± 20
Max.
180
120
710
75
480
330
See Fig.12a, 12b, 15, 16
2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Dr ain-to- Source Br eakdow n Vol tage 40 ––– ––– V
∆
V
(BR)DSS
/∆T
J
B reak do w n Volt age Te m p. Coeffic ie nt ––– 0. 033 ––– V /°C
R
DS(on)
Stat ic D rai n-to-S our c e O n-Res ist anc e ––– 2.7 3.7
mΩ
V
GS(th)
Gat e Thr eshold Voltage 2.0 –– – 4.0 V
gfs Forward Transconductance 170 ––– ––– V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-t o- Source Reve rse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 100 150
Q
gs
Gate-to-Source Charge ––– 31 ––– nC
Q
gd
Ga t e - to-D rain ( " M ille r " ) Ch ar g e ––– 42 –––
t
d(on)
T urn-O n Delay Ti m e ––– 18 – ––
t
r
Ri s e Tim e ––– 110 –––
t
d(off)
Turn-Off Delay Time ––– 36 ––– ns
t
f
Fall Time –––58–––
L
D
Inte rna l D rai n Inductance ––– 4.5 ––– Bet ween le ad,
nH 6mm (0.25in.)
L
S
Inte r nal Source Ind uctance ––– 7 .5 –– – fr om package
and center of die contact
C
iss
Input Capaci tance ––– 4340 –––
C
oss
Output Capacitance ––– 1030 –––
C
rss
Reverse Transfer Capacita nce ––– 550 ––– pF
C
oss
Output Capacitance ––– 3300 –––
C
oss
Output Capacita nce ––– 920 –––
C
oss
ef f.
Effective Output Capacitance ––– 1350 –––
Source-Drain Ratings and Characteristi cs
Par a meter Min . Typ. M a x . Units
I
S
Co ntin uous Sourc e Cur rent ––– ––– 75
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 750
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reve r se Recovery Ti me ––– 28 42 ns
Q
rr
Reverse R ecovery Charge ––– 34 51 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= 25V , I
D
= 75A
I
D
= 75A
V
DS
= 32V
Conditions
V
GS
= 10V
e
V
GS
= 0V
V
DS
= 25V
ƒ = 1. 0M H z
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing t he
integra l revers e
p-n junction di ode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 75A , V
DD
= 20V
di /dt = 10 0A/µ s
e
Conditions
V
GS
= 0V, I
D
= 250µA
Refe renc e to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V , V
GS
= 0V
V
DS
= 40V , V
GS
= 0V , T
J
= 125°C
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V , ƒ = 1.0M Hz
V
GS
= 0V, V
DS
= 0V to 32V
f
V
GS
= 10V
e
V
DD
= 20V
I
D
= 75A
R
G
= 3. 0 Ω