www.jscj-elec.com AD-S9014W* series
Version 1.0
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/
6
2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-S9014W* series Plastic-Encapsulated Transistor
AD-S9014W* series Transistor (NPN)
FEATURES
Complementary to AD-S9015W* series
Small surface mount package
AEC-Q101 qualified
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
45
V
Emitter-base voltage
V
EBO
5
V
Collector continuous current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Thermal resistance from junction to ambient
R
θJA
625
°C/W
Operating junction and storage temperature range
T
j
, T
stg
-55 ~ 150
°C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Test condition
Min
Typ
Max
Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100µA, I
E
= 0A
50
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 100µA, I
B
= 0A
45
-
-
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100µA, I
C
= 0A
5
-
-
V
Collector-base cut-off current
I
CBO
V
CB
= 50V, I
E
= 0A
-
-
0.1
µA
Collector cut-off current
I
CEO
V
CE
= 35V, I
B
= 0A
-
-
1
µA
Emitter-base cut-off current
I
EBO
V
EB
= 4V, I
C
= 0A
-
-
0.1
µA
DC current gain
h
FE
V
CE
= 5V, I
C
= 1mA
200
-
1000
-
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100mA, I
B
= 5mA
-
-
0.3
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 100mA, I
B
= 5mA
-
-
1
V
Base-emitter voltage
V
BE
V
CE
= 5V, I
C
= 2mA
0.58
-
0.7
V
Transition frequency
f
T
V
CE
= 5V, I
C
= 10mA, f = 30MHz
150
-
-
MHz
Colledtor output capacitance
C
ob
V
CB
= 10V, I
E
= 0A, f = 1MHz
-
-
3.5
pF
