www.jscj-elec.com AD-BAS16W/AD-MMBD4148W
Version 1.0 1 / 6 2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-BAS16W/AD-MMBD4148W Plastic-Encapsulated Diode
AD-BAS16W /AD-MMBD4148W Switching diode
FEATURES
Fast switching speed
For general purpose switching applications
High conductance
AEC-Q101 qualified
MARKING
A2 = Device code
www.jscj-elec.com AD-BAS16W/AD-MMBD4148W
Version 1.0 2 / 6 2021-07-01
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Non-repetitive peak reverse voltage
V
RM
100
V
Peak repetitive peak reverse voltage
V
RRM
75
V
Working peak reverse voltage
V
RWM
75
V
DC blocking voltage V
R
75 V
RMS reverse voltage V
R(RMS)
53 V
Forward continuous current I
FM
300 mA
Average rectified output current I
O
150 mA
Non-repetitive peak forward surge current @ t = 8.3ms I
FSM
2.0 A
Power dissipation P
D
200 mW
Thermal resistance from junction to ambient R
θJA
1)
625 °C/W
Operating junction and storage temperature range
T
j
, T
stg
-55 ~ 150
°C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Test condition
Min
Typ
Max
Unit
Reverse breakdown voltage V
BR
I
R
= 10µA 75 V
Forward voltage
V
F1
I
F
= 1mA 0.715
V
V
F2
I
F
= 10mA
0.855
V
F3
I
F
= 50mA 1
V
F4
I
F
= 150mA 1.25
Reverse current
I
R1
V
R
= 75V 1 µA
I
R2
V
R
= 20V 25 nA
Capacitance between terminals C
T
V
R
= 0V, f = 1MHz 2 pF
Reverse recovery time t
rr
I
F
= I
R
= 10mA, I
rr
= 1mA, R
L
= 100Ω
4 ns