1. Gate
2. Drain
3. Source
Pin Definition:
PRODUCT SUMMARY
I( )
D A
650
0.6@ VGS=10V
7
●
●
ABSOLUTE MAXIMUM RATINGS
(T
C
=2
5 ℃, unless otherwise specified)
R<Ω@=DS ON GS()0.7 V 10V
100 avalanche tested%
Block Diagram
●
Case:TO-220,ITO-220, O- , - ,T 251 TO 252
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS
650 V
Gate-Source Voltage VGS
30
V
Continuous Drain Current ID
7 A
Pulsed Drain Current (Note )1
I
DM
42 A
Avalanche Energ ( )y Note 2
86
mJ
Power Dissipation
TO-220/TO-263/ -TO 262
P
D
151
W
TO 251 TO 252-/-
35
Junction Temperature TJ +150 C
Storage Temperature TSTG -55 ~ +150 C
650V SUPER JUNCTION Power MOSFET-
R
SEMICONDUCTOR
TO-220
1
2
3
SJ7N65
ITO-220
12
3
SJ7N65F
SJ7N65D
TO-263
1
3
2
FEATURES
MECHANICAL DATA
Ordering Information
Part No.
Package Type
Package
SJ7N65
TO-220
SJ7N65F
ITO-220
SJ7N65E
TO-262
Quality box()
EAS
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP WWW.JINGHENG CN:// .
11 1
-
TO 262 TO 263 package-,-
SJ7N65D
TO-263
Tube
SJ7N65N
TO-251
SJ7N65M
TO-252
ITO 220-
SJ7N65M
TO-252
SJ7N65E
TO-262
SJ7N65N
TO-251
VV
DS
()
Tube
Tube
Tube
Tape & Reel
Tape & Reel
1000
1000
1000
800
1000
2500
●
RoHS compliant
D
S
G
SJ7N65 Series
RDS on m Typ()(Ω)
1
2
3
12
3
1
3
2
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(T
C
=25 ℃, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Junction to Ambient
TO-220/ - / -TO 251 TO 252
TO-26 / -2 TO 263
Rθ
JA
62
C/W
Junction to Case
TO-220/TO-263/ -TO 262
Rθ
JC
12.
C/W
TO-2 / -51 TO 252
4.1
PARAMETER SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
650 V
Drain-Source Leakage Current I
DSS
1
μA
Gate- Source Leakage Current
Forward
I
GSS
100 nA
Reverse -100 nA
ON CHARACTERISTICS( )Note 3
Gate Threshold Voltage V
GS(TH)
0.6
07.
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
400 pF
Output Capacitance C
OSS
pF113
Reverse Transfer Capacitance C
RSS
64.pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)
25
ns
Turn-On Rise Time t
R
ns55
Turn-Off Delay Time t
D(OFF)
110 ns
Turn-Off Fall Time t
F
9 ns
Total Gate Charge Q
G
10 3.
nC
Gate-Source Charge Q
GS
nC44.
Gate-Drain Charge Q
GD
29.nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
1.5
V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
7
A
Reverse Recovery
Cturren
IRRM
18
A
Reverse Recovery Time t
rr
190 ns
Reverse Recovery Charge Q
RR
μC2.3
TEST CONDITIONS
UNITMAXTYPMIN
V 0V I 250μA
GS D
=,=
V 650V V 0V
DS GS
=,=
V 30V V 0V
GS DS
=,=
V 30V V 0V
GS DS
=- , =
V V I 250μA
DS GS D
=,=
V 10V I 3 5A
GS D
=,=.
V 25V V 0V f 1MHz
DS GS
=,=,=
V 400V I 3 5A
DD D
=,=.,
R20Ω
G
=
V 400V I A
DS D
=,=.,35
V 10V
GS
=
V0VI7A
GS S
=,=
V0VI35A
GS S
=,=.
dI dt 100A μs Note 1
F
/= / ()
25. 4.5
V
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP WWW.JINGHENG CN:// .
11 2
-
ITO 220-
Ω
ITO-220
Note 1 maximum junction temperature: . Repetitive Rating : Pulse width limited by
2. L=
60mH,IAS=A,VDD31=50V,Starting TJ=25 ℃
3. Pulse Test: Pulse width ≤300μS Duty cycle≤1%,.
82
DRAIN SOURCE ON RESISTANCE--
R
DS ON()
09.
SJ7N65 Series