PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω) I
D
(A)
650
1.5@V
GS
=10V
7
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●
●
●
ABSOLUTE MAXIMUM RATINGS
(T
C
=25 C , unless otherwise specified)
R
DS(ON)
<1.5Ω @ V
GS
=10V
Fast switching capability
Low gate charge
Lead free in compliance with EU RoHS directive.
Green molding compound
●
Case:TO-220,ITO-220,TO-263, - PackageTO 262
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
650 V
Gate-Source Voltage V
GSS
Continuous Drain Current I
D
7A
Pulsed Drain Current (Note 2)
I
DM
28 A
Avalanche Energy
435
mJ
Power Dissipation
TO-220/TO-263/ -TO 262
P
D
142
ITO-220 48
W
Junction Temperature T
J
+150 C
Storage Temperature T
STG
-55 ~ +150 C
●
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 30mH, I
AS
=5.25A,V
DD
=50V,R
G
= 25 Ω,Starting T
J
=25C
650V N Channel Power MOSFET
-
R
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
Ordering Information
E
AS
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP WWW.JINGHENG CN:// .
91
-
1. Gate
2. Drain
3. Source
Pin Definition:
Block Diagram
D
G
S
TO-220AB
1
2
3
7N65
ITO-220AB
1
2
3
7N65F
7N65D
TO-263
1
3
2
7N65M
TO-252
7N65E
TO-262
7N65N
TO-251
Part No.
Package
Packing
7N65-TU
TO-220 50pcs / Tube
7N65F-TU
ITO-220 50pcs / Tube
7N65E-TU
TO-262
50pcs / Tube
7N65D-TU
TO-263
50pcs / Tube
7N65DR-T
TO-263
7N65N-TU
TO-251
75pcs / Tube
7N65M-TU
TO-252
75pcs / Tube
7N65M-TR
TO-252
2 5K 13 Reel. pcs / "
800 13 Reelpcs / "
7N65 7N65F 7N65D 7N65E 7N65M 7N65N
TO-2 , - Package51 TO 252
TO 251 TO 252-/-
32
±30
V
THERMAL DATA
650V N-Channel Power MOSFET
ELECTRICAL CHARACTERISTICS (T
C
=25 C , unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Junction to Ambient
TO-220/ITO-220
TO-263/ -TO 262
Rθ
JA
62.5
C/W
Junction to Case
TO-220/TO-263/ -TO 262
Rθ
JC
235.
C/W
ITO-220
55.
PARAMETER SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
650 V
Drain-Source Leakage Current I
DSS
1μA
Gate- Source Leakage Current
Forward
I
GSS
100 nA
Reverse -100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
0.67 V/ C
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
Static Drain-Source On-State Resistance R
DS(ON)
1.35 1.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
1210 1400 pF
Output Capacitance C
OSS
pF140 180
Reverse Transfer Capacitance C
RSS
40 50 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)
50
70 ns
Turn-On Rise Time t
R
ns150 180
Turn-Off Delay Time t
D(OFF)
380 410 ns
Turn-Off Fall Time t
F
180 220 ns
Total Gate Charge Q
G
29
38 nC
Gate-Source Charge Q
GS
nC9
Gate-Drain Charge Q
GD
19 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
1. 4 V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
7A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
28 A
Reverse Recovery Time t
rr
490 ns
Reverse Recovery Charge Q
RR
μC3.2
Notes: 1. Pulse Test: Pulse width %≤300μS Duty cycle≤2,.
2. Essentially independent of operating temperature.
TEST CONDITIONS
UNITMAXTYPMIN
V 0V I 250 A
GS D
=,= μ
V 650V V 0V
DS GS
=,=
/△TJ
V 30V V 0V
GDS
=,=
V 30V V 0V
GS DS
=- , =
I 250 A Referenced to 25 C
D
= μ°,
V V I 250 A
DS GS D
=,=μ
V 10V I 3 5A
GS D
=,=.
V 25V V 0V f 1MHz
DS GS
=,=,=
V 300V I 7A
DD D
=,=,
R 25 Note1 2
G
=)Ω( ,
V 520V I 7A
DS D
=,=,
V 10V Note1 2
GS
=,( )
V0VI7A
GS S
=,=
V0VI7A
GS S
=,=
dI dt 100A s Note 1
F
/= /μ ()
20.40.
V
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP WWW.JINGHENG CN:// .
92
-
7N65 7N65F 7N65D 7N65E 7N65M 7N65N
TO-2 /TO-251 52
110
TO-2 /TO-251 52
29.