D15XB80
SILI CON BRIDGE RECT IFIERS
PRV : 800 Volts
Io : 15 Am peres
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperat ure unl ess otherwise s pecified.
SYMBOL
VALUE UNIT
Maximum Recurrent Peak Reverse Voltage
V
RM
800 V
Maximum Average Forward Current With heatsink, Tc = 100 °C 15
(50Hz Sine wave, R-load ) Without heatsink, Ta = 25 °C 3.2
Maximum Peak Forward Surge Current, Tj = 25 °C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms ≤ t < 10 ms, Tc = 25 °C
I
2
t
110
A
2
S
Maximum Forward Voltage per Diode at I
F
= 7.5 A
( Pulse measurement, Rating of per diode)
Maximum DC Reverse Current, V
R
=V
RM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case, With heatsink
R
ӨJC
1.5 °C/W
Maximum Thermal Resistance, Junction to Ambient, Without heatsink
R
ӨJA
22 °C/W
Maximum Thermal Resistance, Junction to Lead, Without heatsink
R
ӨJL
5 °C/W
Operating Junction Temperature
T
J
150 °C
Storage Temperature Range
T
STG
- 40 to + 150 °C
Page 1 of 2 Rev. 00 : July 22, 2015
RATING
I
FSM
200 A
I
O
A
1.1 V
I
R
10
µA
V
F
RBV25
Dimensions in millimeters
C3
4.9 ± 0.2
3.9
± 0.2
~
ฦ
3.2
±
0.1
~
11 ± 0.2
17.5 ± 0.5
20
±
0.3
0.7 ± 0.1
1.0
±
0.1
2.0
±
0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
13.5 ± 0.3
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RATING AND CHARACTERISTIC CURVES ( D15XB80 )
FIG.1 - DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
80 90 100 110
120 130 140 150
1 10 100
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES (CYCLES)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION
PER DIODE
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE, (V)
Page 2 of 2
Rev. 00 : July 22, 2015
15
10
5
100
200
0
0
150
100
50
0.1
10
1.0
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE RECTIFIER FORWARD
CURRENT, (A)
FORWARD CURRENT, (A)
Tc = 25 °C
20
Sine wave, R-load on
AVERAGE RECTIFIED CURRENT,
50
15
0
10
20
0
5
10
25
POWER DISSIPATION , (W)
20
30
40
60
Sine wave
T
J
= 150 °C
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