D1FL20U
SURFACE MOUNT
SUPER FAST RECTIFIERS
PRV : 200 Volts
Io : 1.1 Ampere
FEATURES :
* Glass passivated junction chip
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
MAXIMUM RAT INGS AND ELECTRICAL CHARACTERI S TICS (If not specified Tl=25 °C)
SYMBOL UNIT
Maximum Recurr ent Peak Reverse Voltage VRRM V
Maximum RMS Voltage V
RMS V
Maximum DC Blocking Voltage V
DC V
Maximum Average For ward Cur r ent
( 50 Hz sine wav e , R - load , T
a
= 25 °C)
Maximum Peak For war d Surge Cur r ent
( 50 Hz sine wave, Non - repettitive 1 cycle
peak value, T
j
=25 °C )
Maximum Peak For war d Voltage at I
F = 1.1 A VF V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recover y Time ( Not e 1 )
Trr
ns
Maximum Thermal Resistance Junct ion to Lead
R
ӨJL
°C/W
Maximum Thermal Resistance Junct ion to Ambient
Storage Tem per at ure Range
T
STG
°C
Notes :
( 1 ) Reverse Rec ov er y Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
Page 1 of 2 Rev. 01 : August 6, 2014
µA
I
FSM 20 A
RATING
IR 10
A
0.98
VALUE
200
140
200
1.1 (on alum inum substr at e)
I
O
0.84 (on glass-epoxy substrate)
- 55 to + 150
23
35
108 (on aluminum substr at e)
R
ӨJA
°C/W
157 (on glass-epoxy substrate)
2.0
±
0.2
2.1 ± 0.2
SMA (DO-214AC)
1.2
±
0.2
5.0 ± 0.15
4.5 ± 0.15
2.6 ± 0.15
Dimensions in millim eters
1.1 ± 0.3
0.2 ± 0.07
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FIG. 1 - DE RATING CURVE FIG. 2 - P E AK S URG E FO RWARD CAP ABILITY
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
AMBIENT TEMPERATURE , ( °C)
NUMBER OF CYCLES, (cycles )
FIG. 3 - FO RWARD CHARACTE RISTICS FIG. 4 - J UNCTION CAPACITANCE
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1 10 100
Page 2 of 2 Rev. 01 : August 6, 2014
RATING AND CHARACTERISTIC CURVES ( D1FL20U )
1.6
0
40
0
PEAK FORWARD SURGE CURRENT,
(A)
AVERAGE FORWARD OUTPUT CURRENT,
(A)
0.2
0.4
0.6
0.8
1.2
1.4
1.0
30
20
10
non-repetitive
sine wave,
Tj = 25 °C
surge current is applied
10
1.0
0.1
100
10
1
Tl= 25 °C [MAX]
FORWARD CURRENT, (A)
REVERSE VOL TAGE, (V)
FORWARD VOL TAGE, (V)
JUNCTION CAPACITANCE, (pF)
Tl = 25 °C [TYP]
f = 1MHz
Tl = 25 °C
TYP per diode
Aluminum Substrate
Glass Epoxy Substrate.
50
200
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