A
V
A
V
3
50~1000
80
1.0~1.70
I
F
V
RRM
I
FSM
V
F
‧Case: DO-214AA(SMB)
‧Case Material: Molded Pl
Classification Rating 94V-0
‧Terminals: Lead free Plating (Tin Finish)
Solderable
per
MIL
-ST
D
-202,
Method
208
Features
Solderable per MIL STD 202, Method 208
‧Polarity
: Cathode Band
‧
Weight: 0.092 grams (approximate)
Maximum Ratings (TA=25°C unless otherwise noted)
Mechanical Data
1
astic. UL Flammability
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
I
F
A
I
FSM
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
80.0
Peak forward surge current, 8.3ms single half sine-
wa
ve superimposed on rated load
3.0Maximum average forw
ard rectified current
V
F
1.7
I
R
uA
C
j
pF
Trr ns
R
θJ
°
C/W
1.0
Typical Thermal
Resistance(NOTE3)
Maximum Instantaneous Forward Voltage
IF=
1A @ 25°C
Maximum DC Reverse Current @ Tc=25°C
at Rated DC Blocking Voltage @ Tc=100°C
Typical Junction Capacitance(NOTE1)
Maximum Reverse Recovery Time(NOTE2)
5
100
20
1.3
R
θJ
a
C/W
T
J
°C
T
STG
°C
Storage Temperature Range
NOTES:
Typica
l
Thermal
Resistance(NOTE3)
-55 to +150
-55 to +150Operating Te
mperature Range
US3AB
US3BB US3DB US3GB
US3JB
US3KB
US3MB
50 100 200 400 600 800 1000 V
V
70
50.0
75.0
‧Low
profile package
‧Ideal for automated placement
‧Low reverse current
‧Fast reverse recovery time
‧Component in accordance to RoHS 2002/95/EC
1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC
2.Measured with IF=0.5A,IR=1A,IRR=0.25A
3 Device mounted on
FR
-
4 substrate 1
"*
1
"
2oz single
-
sided PC boards wi
th 0 1
"*
015
"
copper pad
3
.
Device
mounted
on
FR 4
substrate
,
11
,
2oz
,
single sided
,
PC
boards
with
0
.
10
.
15
copper
pad
.
SMB
Package Outline Dimensions
Spec No:23707D12
Date:2017.Jun
Dimensions in inches and millimeters
PARAMETER
SYMBOL
UNIT
Primary Characteristics
Revision:B
High Efficiency Rectifiers
Glass Passivation Junction
US3AB THRU US3MB
Rating and Characteristics Curves
FIG. 1-Ty
pical Forw
ard Current Derating Cu
rve F
IG. 2-Typical Forward Characteristics
FIG. 3-Maximum Non-Repetitive Forward Surge Current FIG. 4-Typical Reverse Characteristics
FIG. 5-Typical Junction Capacitance
2
FIG. 5-Typical Junction Capacitance
(+)
(
+
)
25
Vdc
(app
rox.)
()
()
10
NONINDUCTIVE
50
NO
NINDUCTIVE
W
W
PULSE
GENERATOR
(NOTE 2)
+0.5A
0
-0.25A
|
|
|
|
|
|
|
|
trr
D.U.T.
(
+
)
OSCILL
ISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET T
IME BASE FOR
50 / 10ns / cm
FIG. 6-Reverse Recovery Time Characteristic and Test Circuit
NUMBER OF CYCLES AT 60Hz
2
2.5
3
3.5
R
D CURRENT,(A)
0
0.5
1
1.5
0
25 50 75 100 125 150
AVERAGE FORWA
R
AMBIENT TEMPERATURE(℃)
10.00
100.00
W
ARD CURRENT (A)
TJ=25℃ PULSE
W
IDTH 300us
2% DUTY
CYCLE
0.01
0.10
1.00
0.2
0.4 0.6
0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FOR
W
FORWARD VOLTAGE (V)
80
100
ENT
TJ=25℃
8.3ms Si
ngle
HlfSi
20
40
60
AK FORWARD SURGE CUR
H
a
lf
Si
ne
Wave
JEDEC
0
1 10 100
NUMBER OF CYCLES AT 60Hz
PE
10
100
25℃
100℃
N
T (uA)
0.1
1
R
EVERSE LEAKAGE CURRE
N
0.01
20
40 60 80 100
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
R
150
60
90
120
ION CAPACITANCE (pF)
0
30
0
1 10 100
REVERSE VOLTAGE
(
V
)
JUNCT
US3AB~US3DB
US3GB
US3JB~US3MB
Spec No:23707D12
Date:2017.Jun
Revision:B
High Efficiency Rectifiers
Glass Passivation Junction
US3AB THRU US3MB