RFP50N06
N-Channel Power MOSFET
60V, 50A, 22 mΩ
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Features
• 50A, 60V
•r
DS(ON)
= 0.022Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER PACKAGE BRAND
RFP50N06 TO-220AB RFP50N06
G
D
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
September 2013
RFP50N06
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
RFP50N06
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
60 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
50
(Figure 5)
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
(Figure 6)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
131
0.877
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 60 - - V
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 10) 2 - 4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60V,
V
GS
= 0V
T
C
= 25
o
C--1µA
T
C
= 150
o
C--50µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance r
DS(ON)
I
D
= 50A, V
GS
= 10V (Figures 9) - - 0.022 Ω
Turn-On Time t
ON
V
DD
= 30V, I
D
= 50A
R
L
= 0.6Ω, V
GS
= 10V
R
GS
= 3.6Ω
(Figure 13)
-
-
95 ns
Turn-On Delay Time t
d(ON)
-1
2
- ns
Rise Time t
r
-5
5
- ns
Turn-Off Delay Time t
d(OFF)
-3
7
- ns
Fall Time t
f
-1
3
- ns
Turn-Off Time t
OFF
-
-
75 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0 to 20V
V
DD
= 48V, I
D
= 50A,
R
L
= 0.96Ω
I
g(REF)
= 1.45mA
(Figure 13)
-
125
150 nC
Gate Charge at 10V Q
g(10)
V
GS
= 0 to 10V
-
67 80 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0 to 2V
-
3.7 4.5 nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
(Figure 12)
-
2020
- pF
Output Capacitance C
OSS
-
600
- pF
Reverse Transfer Capacitance C
RSS
-
200
- pF
Thermal Resistance Junction to Case R
θJC
(Figure 3)
-
- 1.14
o
C/W
Thermal Resistance Junction to Ambient
R
θJA
TO-220
-
-
62
o
C/W
-
-
-
- -
Sour
ce to Drain Diode Specifications
PARAMETER
SYMBOL TEST CONDITIONS MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 50A
-
-
1.5
V
Reverse Recovery Time t
rr
I
SD
= 50A, dI
SD
/dt = 100A/µs
-
-
125
ns