4-467
RFG50N06, RFP50N06, RF1S50N06SM
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Features
• 50A, 60V
•r
DS(ON)
= 0.022Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER PACKAGE BRAND
RFG50N06 TO-247 RFG50N06
RFP50N06 TO-220AB RFP50N06
RF1S50N06SM TO-263AB F1S50N06
NOTE: When ordering, use the entire part number . Add the suffix, 9A,
to obtain the T O-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
G
D
S
JEDEC STYLE TO-247 JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
4-468
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N06, RFP50N06
RF1S50N06SM UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
60 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20 V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
50
(Figure 5)
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
(Figure 6, 14, 15)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
131
0.877
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 60 - - V
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 10) 2 - 4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60V,
V
GS
= 0V
T
C
= 25
o
C--1µA
T
C
= 150
o
C--50µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance r
DS(ON)
I
D
= 50A, V
GS
= 10V (Figures 9) - - 0.022 Ω
Turn-On Time t
ON
V
DD
= 30V, I
D
= 50A
R
L
= 0.6Ω, V
GS
= 10V
R
GS
= 3.6Ω
(Figure 13)
- - 95 ns
Turn-On Delay Time t
d(ON)
-12 - ns
Rise Time t
r
-55 - ns
Turn-Off Delay Time t
d(OFF)
-37 - ns
Fall Time t
f
-13 - ns
Turn-Off Time t
OFF
- - 75 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0 to 20V V
DD
= 48V, I
D
= 50A,
R
L
= 0.96Ω
I
g(REF)
= 1.45mA
(Figure 13)
- 125 150 nC
Gate Charge at 10V Q
g(10)
V
GS
= 0 to 10V - 67 80 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0 to 2V - 3.7 4.5 nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
(Figure 12)
- 2020 - pF
Output Capacitance C
OSS
- 600 - pF
Reverse Transfer Capacitance C
RSS
- 200 - pF
Thermal Resistance Junction to Case R
θJC
(Figure 3) - - 1.14
o
C/W
Thermal Resistance Junction to Ambient R
θJA
TO-247 - - 30
o
C/W
TO-220, TO-263 - - 62
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 50A - - 1.5 V
Reverse Recovery Time t
rr
I
SD
= 50A, dI
SD
/dt = 100A/µs - - 125 ns
RFG50N06, RFP50N06, RF1S50N06SM