STW77N65M5
N-channel 650 V, 0.033 Ω, 69 A, MDmesh™ V Power MOSFET
TO-247
Features
■
Higher V
DSS
rating
■
Higher dv/dt capability
■
Excellent switching performance
■
Easy to drive
■
100% avalanche tested
Application
Switching applications
Description
This device is a N-channel MDmesh�� V Po wer
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstand ing eff i cien cy.
Figure 1. Internal schematic diagram
Order code
V
DSS
@T
jmax.
R
DS(on)
max. I
D
STW77N65M5 710 V < 0.038 Ω 69 A
TO-247
1
2
3
!-V
$
'
3
Table 1. Device summary
Order code Marking Package Packaging
STW77N65M5 77N65M5 TO-247 Tube
STW77N65M5 Electrical ra tings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate- source voltage 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 69 A
I
D
Drain current (continuous) at T
C
= 100 °C 41.5 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 276 A
P
TOT
Total dissipation at T
C
= 25 °C 400 W
I
AR
Max current during repetitive or single pulse av alanche
(pulse width limited by T
JMAX
)
15 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C , I
D
= I
AR
, V
DD
= 50 V)
2000 mJ
dv/dt
(2)
2. I
SD
≤ 69 A, di/dt = 400 A/µs, peak V
DS
< V
(BR)DSS
, V
DD
= 400 V
Peak diode recovery voltage slope 15 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Ther mal resistance junction-case max 0.31 °C/W
R
thj-amb
Thermal resistance junction-ambient max 50 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C