MBR20100CT
Rev0 22052019EEG
Continental Device India Pvt. Limited
Data Sheet Page 1 of 5
Continental Device India Pvt. Limite d
An IATF 16949, ISO9001 and ISO 14001 Certified Company
Schottky Barrier Recti fi ers
MBR20100CT
TO-220AB
Plastic Package
RoHS compliant
FEATURES:
1. Multilayer Metal -Silicon Potential Structure.
2. Low Leakage Current
3. High Current Capability, High Efficiency
4. High Junction Temperature Capability.
APPLICATIONS:
1. Low Voltage High Frequency Switching Power Supply
2. Low Voltage High Frequency Invers Circuit.
3. Low Voltage Continued Circuit and Protection Circuit.
ABSO LUT E MAXI MUM RATINGS (T
a
= 25 °C)
Symbol Value Unit
V
RRM
100 V
I
FAV
20 A
I
FSM
260X2 A
T
J
150 ℃
T
STG
-40
～
150 ℃
R
θJC
2 ℃/W
MBR20100CT Device optimized for ultra-low forward voltage drop to maximize efficiency in Power
Supply applications.
*Average Rectified Forward Current (Rated VR-20Khz Square
Wave) - 50% duty cycle
Parameter
Maximal Inverted Repetitive Peak Voltage
Forward Peak Surge Current(Rated Load 8.3 Half Mssine
Wave-According to JEDEC Method)
Operating Junction Temperature
Storage Temperature
Typical Thermal Resistance(per leg) Package=TO-220AB
MBR20100CT
Rev0 22052019EEG
Continental Device India Pvt. Limited
Data Sheet Page 2 of 5
Continental Device India Pvt. Limite d
An IATF 16949, ISO9001 and ISO 14001 Certified Company
ELECTRICAL CHARACTERI STICS at T
a
= 25 ��C
Unit
Min. Typ. Max.
TJ =25℃
V
B
I
R
=1mA
100 -- -- V
TJ =25℃ -- -- 0.01
TJ =125℃ -- -- 10.00
TJ =25℃ -- -- 0.85
TJ =125℃ -- -- 0.75
CHARASTERISTIC CURVES
Test
Conditions
V
mA
Value
Break down voltage
Symbol
I
F
=10A
(I
FAV
=10A×2)
V
R
=100V
Reverse Current
Forward Voltage Drop
Parameter
I
R
V
F