Continental Device India Pvt. Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
N-CHANNEL MOSFET
2N7000K
TO-92
Plastic Package
1. Drain
2. Gate
3. Source
Features :
1. Trench
2. ESD Protected : 2000V
Applications :
Direct Logic -Level Interface: TTL/CMOS
Solid State Relays
Drivers : Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Drain - Source Voltage V
DS
60 V
Gate - Source Voltage V
GS
+20 V
Continuous Drain Current (T
J
= 150°C) I
D
T
A
= 25°C 0.47
A
T
A
= 70°C 0.37
Pulsed Drain Current * I
DM
1 A
Power Dissipation P
D
T
A
= 25°C 0.8
W
T
A
= 70°C 0.51
Thermal Resistance from Junction to
Ambient
R
thJA
156 °C/W
Operating Junction and Storage
Temperature Range
T
j
, T
stg
- 55 to +150 ºC
* Pulse width is limited by maximum junction temperature
2N7000K Rev1_15072015E
Continental Device India Pvt. Limited Data Sheet Page 1 of 5
Continental Device India Pvt. Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
ELECTRICAL CHARACTERISTICS
(1)
(T
a
=25ºC unless specified otherwise)
STATIC
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Drain Source Breakdown Voltage V
(BR)DSS
V
GS
=0V, I
D
=10µA 60 V
Gate Threshold Voltage V
GS (th)
V
DS
=V
GS
, I
D
=250µA 1 2 2.5 V
Gate Body Leakage Current I
GSS
V
DS
=0, V
GS
=+/-10V +/-1 µA
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V, V
GS
=0V 1.0 µA
V
DS
=60V, V
GS
=0V, T
J
= 55°C 10 µA
On State Drain Current
(2)
I
D (on)
V
GS
=10V, V
DS
=7.5V 0.8 A
V
GS
=4.5V, V
DS
=10V 0.5 A
Static Drain Source On Resistance
(2)
R
DS (on)
V
GS
=10V, I
D
=0.5A 2
Ω
V
GS
=4.5V, I
D
=0.2A 4
Forward Transconductance
(2)
* g
FS
V
DS
=10V
,
I
D
=0.5A 550 mS
Diode Forward Voltage V
SD
I
S
=0.3A, VGS = 0V 1.3 V
DYNAMIC
(2)
Total Gate Charge Q
g
V
DS
=10V, V
GS
=4.5V, I
D
=0.25A
0.4 0.6
nCGate - Source Charge Q
gs
0.11
Gate - Drain Charge Q
gd
0.15
Gate Resistance R
g
173 Ω
Turn - On Time
t
d(on)
V
DD
=30V, R
L
=150Ω,
I
D
=0.2A,V
GEN
=10V, R
g
=10Ω
3.8 10
ns
t
r
4.8 15
Turn - Off Time
t
d(off)
12.8 20
t
f
9.6 15
Notes :
(1). Pulse Test : PW <300µs, duty cycle <2%
(2). Guranteed by design, not subject to production testing.
TYPICAL ELECITRICAL CHARACTERISTICS
2N7000K Rev1_15072015E
Continental Device India Pvt. Limited Data Sheet Page 2 of 5