PESDU0711P1A
Rev.01.1907
Copyright © 2019 PN
-
Silicon Co., Ltd
www
.
pn
-
silicon
.
com
1
/
6
7A
1-Line, Bi-directional, Transient Voltage Suppressor
Features
•
Stand-off voltage: ±7V Max.
•
Transient protection for each line according to
IEC61000-4-2(ESD): ±30kV (contact)
IEC61000-4-4 (EFT): 40A (5/50ns)
IEC61000-4-5(surge): 6A (8/20μs)
•
Ultra-low capacitance: C
J
= 10pF typ.
•
Low leakage current:
•
Low clamping voltage: V
CL
=12.0V typ. @ I
PP
= 16A
(TLP)
•
Solid-state silicon technology
Applications
•
Cellular handsets
•
USB V
BUS
and CC Line Protection
•
Microphone Line Protection
•
GPIO Protection
Descriptions
PESDU0711P1A is a bi-directional TVS (Transient Voltage
Suppressor). It has been specifically designed to protect
sensitive electronic components which are connected to
low speed data lines and control lines from over-stress
caused by ESD (Electrostatic Discharge), EFT (Electrical
Fast Transients) and Lightning.
PESDU0711P1A
may be used to provide ESD protection up
to ±30KV (contact discharge) according to IEC61000-4-2,
and withstand peak pulse current up to 6A (8/20μs)
according to IEC61000-4-5.
PESDU0711P1A
is available in DFN1006-2 package.
Standard products are Pb-free and Halogen-free.
DFN1006-2 (Bottom View)
Pin1 Pin2
Pin configuration
Pin1 Pin2
7A= Device code
Marking (Top View)
Order information
Device
Package
Shipping
PESDU0711P1A
DFN1006-2
10000/Tape & Reel
PESDU0711P1A
Rev.01.1907
Copyright © 2019 PN
-
Silicon Co., Ltd
www
.
pn
-
silicon
.
com
2
/
6
Absolute maximum ratings
Parameter
Symbol
Rating
Unit
Peak pulse power (t
p
= 8/20μs)
P
pk
84
W
Peak pulse current (t
p
= 8/20μs)
I
PP
6
A
ESD according to IEC61000-4-2 air discharge
V
ESD
±30
kV
ESD according to IEC61000-4-2 contact discharge
±30
Junction temperature
T
J
125
o
C
Operating temperature
T
OP
-40~85
o
C
Lead temperature
T
L
260
o
C
Storage temperature
T
STG
-55~150
o
C
Electrical characteristics (T
A
= 25
o
C, unless otherwise noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Reverse maximum working voltage
V
RWM
±7
V
Reverse leakage current
I
R
V
RWM
=7V
100
nA
Reverse breakdown voltage
V
BR
I
BR
= 1mA
7.2
10.5
V
Reverse holding voltage
V
HOLD
I
HOLD
= 50mA
7.2
10.5
V
Clamping voltage
1)
V
CL
I
PP
= 16A, t
p
= 100ns
12.0
V
Dynamic resistance
1)
R
DYN
0.28
Ω
Clamping voltage
2)
V
CL
V
ESD
= 8kV
12.0
V
Clamping voltage
3)
V
CL
I
PP
= 1A, t
p
= 8/20μs
9
11
V
I
PP
= 6A, t
p
= 8/20μs
12
14
V
Junction capacitance
C
J
V
R
= 0V, f = 1MHz
10
13
pF
C
J
V
R
= 2.5V, f = 1MHz
8
11
pF
Notes:
1)
TLP parameter: Z
0
= 50Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
2)
Contact discharge mode, according to IEC61000-4-2.
3)
Non-repetitive current pulse, according to IEC61000-4-5.