PESDU0511P0A
Rev.01.1901
www.pn-silicon.com
Copyright © 2019 PN -Silicon Co., Ltd
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1-Line, Bi-directional, Transient Voltage Suppressor
Features
Stand-off voltage: ±5V Max.
Transient protection for each line according to
IEC61000-4-2(ESD): ±30kV (contact) IEC61000-4-4
(EFT): 40A (5/50ns)
IEC61000-4-5(surge): 8A (8/20μs)
Ultra-low capacitance: CJ = 10pF typ.
Low leakage current:
Low clamping voltage: VCL = 10.0V typ. @ IPP = 16A
(TLP)
Solid-state silicon technology
Applications
Cellular handsets
Tablets
Laptops
Other portable devices
Network communication devices
Descriptions
PESDU0511P0A is a bi-directional TVS (Transient Voltage
Suppressor). It has been specifically designed to protect
sensitive electronic components which are connected to
low speed data lines and control lines from over-stress
caused by ESD (Electrostatic Discharge), EFT (Electrical
Fast Transients) and Lightning.
PESDU0511P0A may be used to provide ESD protection
up to ±30KV (contact discharge) according to IEC61000-
4-2, and withstand peak pulse current up to 8A (8/20μs)
according to IEC61000-4-5.
PESDU0511P0A is available in DFN0603-2 package.
Standard products are Pb-free and Halogen-free.
DFN0603-2
Pin1 Pin2
Pin configuration
Pin1 Pin2
Top View
A5 = Device code
Order information
Device
Package
Shipping
PESDU0511P0A
DFN0603-2
10000/Tape & Reel
A
5
PESDU0511P0A
Rev.01.1901
www.pn-silicon.com
Copyright © 2019 PN -Silicon Co., Ltd
2 / 6
Absolute maximum ratings
Parameter
Symbol
Rating
Unit
Peak pulse power (t
p
= 8/20μs)
P
pk
96
W
Peak pulse current (t
p
= 8/20μs)
I
PP
8
A
ESD according to IEC61000-4-2 air discharge
V
ESD
±30
kV
ESD according to IEC61000-4-2 contact discharge
±30
Junction temperature
T
J
125
℃
Operating temperature
T
OP
-40~85
℃
Lead temperature
T
L
260
℃
Storage temperature
T
STG
-55~150
℃
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Reverse maximum working voltage
V
RWM
±5.0
V
Reverse leakage current
I
R
V
RWM
= 5V
100
nA
Reverse breakdown voltage
V
BR
I
BR
= 1mA
5.3
6
V
Reverse holding voltage
V
HOLD
I
HOLD
= 50mA
5.3
6
V
Clamping voltage
1)
V
CL
I
PP
= 16A, t
p
= 100ns
10.0
V
Dynamic resistance
1)
R
DYN
0.2
Ω
Clamping voltage
2)
V
CL
V
ESD
= 8kV
10.0
V
Clamping voltage
3)
V
CL
I
PP
= 1A, t
p
= 8/20μs
8
V
I
PP
= 8A, t
p
= 8/20μs
12
V
Junction capacitance
C
J
V
R
= 0V, f = 1MHz
10
13
pF
C
J
V
R
= 2.5V, f = 1MHz
8
11
pF
Notes:
1.TLP parameter: Z
0
= 50Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
2.Contact discharge mode, according to IEC61000-4-2.
3.Non-repetitive current pulse, according to IEC61000-4-5.
Electrical characteristics (TA = 25 ℃, unless otherwise noted)