Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Typical Junction Capacitance
20 40
V
14
28
V
V
1.0
30
0.3
10
95
-55 ~ +150
A
A
V
mA
pF
°
C
Typical Thermal Resistance
°
C/W
Units
Absolute Maximum Ratings and Electrical characteristics
Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
25
°
C
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
SS12AF
T = 25
°
C
a
T
=100
°
C
a
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
R
θ
JA
C
j
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
70
100
0.55 0.70 0.85
110
-55 ~ +150
°
C
120
84
120
150
105
150
200
140
200
0.90
0.2
5
0.1
2
80
40
FEATURES
Metal silicon junction, majority carrier conduction
For surface mounted applications
Low power loss, high efficiency
High forward surge current capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A
27mg 0 00095ozpprox. Weight:
/ .
(
2
)
(
1
)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(
2
)
(
1
)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
•
•
•
•
•
•
SS12AF-SS120AF
2
059Rev.01.1
Copyright © 2019 PN
SS14AF SS16AF SS18AF SS110AF SS112AF SS115AF SS120AF