Schottky rectifier
Features
●
Low profile package
●
Ideal for automated placement
●
Ultrafast reverse recovery time
●
Low power losses, high efficiency
●
Low forward voltage drop
●
High surge capability
●
High temperature soldering：
260℃/10 seconds at terminals
●
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Dat e
Major Ratings and Characteristics
●
Case: JEDEC DO-214AC molded plastic
●
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
●
Polarity: Laser band denotes cathode end
V
F
0.50V, 0.55V, 0.70V, 0.85V，0.95V
T
j
max.
125 °C
I
F(AV)
3.0A
V
RRM
20 V to 200 V
I
FSM
100A
Maximum Ratings & Thermal Characteri st ics
(T
A
= 25 °C unless otherwise noted)
Electrical Charact eri st i cs
(T
A
= 25 °C unless otherwise noted)
j
SS
32A
-
SS
320A
Items
Symbol
SS32A
SS33A
SS34A
SS35A
SS36A
SS38A
SS310A
SS315A
SS320A
UNIT
Maximum repetitive peak
reverse voltage
V
RRM
20
30
40
50
60
80
100
150
200
V
Maximum RMS voltage
V
RMS
14
21
28
35
42
56
70
105
140
V
Maximum DC blocking voltage
V
DC
20
30
40
50
60
80
100
150
200
V
Maximum average forward
rectified current
I
F(AV)
3
A
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
I
FSM
100
A
Voltage rate of change
(rated VR)
dv/dt
10000
V/μs
Thermal resistance from
junction to lead
R
θJL
35
℃/W
Operating junction and
storagetemperature range
T
J
，T
STG
–65 to +125
℃
Items
Test conditions
Symbol
SS32A
SS33A-
SS34A
SS38A-
SS310A
SS315A-
SS320A
UNIT
Instantaneous forward
voltage
IF=3.0A
VF 0.50
0.55
0.70
0.85
0.95
V
Reverse current
VR=VDC
Tj=25℃
IR
0.5
mA
Tj=100℃
5.0
Rev.02.1906
www.pn-silicon.com
Copyright © 2019 PN
-Silicon Co., Ltd
1 / 3
SS35A-
SS36A
Characteristic Curves
(T
A
=25 ℃ unless otherwise noted)
Rev.02.1906
www.pn-silicon.com
Copyright © 2019 PN
-Silicon Co., Ltd
2 / 3
SS
32A
-
SS
320A