FEATURES
MECHANICAL DA
TA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Low profile package
Ideal for automated placement
Ultrafast reverse recovery time
Low power losses, high efficiency
Low forward voltage drop
High surge capability
High temperature soldering
260
/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Case:
JEDEC SOD-123FL molded plastic
body over passivated chip
Terminals:
Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity:
Laser band denotes cathode end
Weight: 0.017gram
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SS
SYMBOLS
UNITS
20
14
20
VRRM
V
RMS
V
DC
I
(AV)
I
FSM
VF
3
.0
70.0
0.70
Operating junction temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current T
A
=25 C
at rated DC blocking voltage T
A
=100 C
IR
0.5
T
J
T
STG
Storage temperature range
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
100
70
49
70
90
63
90
VOLTS
VOLTS
VOLTS
Amp
Amps
Volts
C
mA
C
-50 to +150
-50 to +125 -50 to +150
20.0
10.0
0.55 0.850.52
MDD Catalog
Number
SS32D1F-SS310D1F
1
/
2
silicon.com
-
www.pn
059Rev.01.1
Copyright © 2019 PN
Silicon Co., Ltd
-
32D1F
SS
33D1F
SS
34D1F
SS
35D1F
SS
36D1F
SS
37D1F
SS
38D1F
SS
39D1F
SS
310D1F
3
2.4
1.8
1.2
0.6
0
0 25 50 75 100 125 150 175
80
64
48
32
16
0
0.2 0.4 0.6 0.8 1.0 1.1
FIG. 3-TYPICAL INSTANTANEOUS FOR
WARD
CHARACTERISTICS
NUMBER OF CYCLES AT 60 Hz
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
FIG. 1- FORWARD CURRENT DERATING CURVE
A
VERAGE FORWARD RECTIFIED CURREN
T,
AMPERES
INST
ANTANEOUS FOR
WARD
CURRENT,AMPERES
PEAK FOR
WARD SURGE CURRENT,
AMPERES
INSTANTANEOUS FORW
ARD VOLTAGE,
VOLTS
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1
10 100
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.01
0.1
1
20
10
T
J
=25 C
PULSE WIDTH=300
µ
s
1%DUTY CYCLE
0 20 40 60 80 100
100
10
1
0.1
0.01
0.001
TJ=25 C
TJ=100 C
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INST
ANTANEOUS REVERSE CURRENT,
MILLIAMPERES
AMBIENT TEMPERATURE, C
DSK37-DSK310
DSK32-DSK36
TJ=75 C
DSK35-DSK36
DSK32-DSK34
DSK37-DSK310
2
2
silicon.com
-
www.pn
059Rev.01.1
Copyright © 2019 PN
Silicon Co., Ltd
-
SS32D1F-SS310D1F