PESDR3321P1A
Rev.04.2203
www.pn-silicon.com
Copyright © 2022 PN-Silicon Co., Ltd
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1-Line Ultra Low Capacitance Bi-directional TVS Diode
Description
PESDR3321P1A is an ultra-low capacitance TVS
(Transient Voltage Suppressor) designed to protect high
speed data interfaces. It has been specifically designed
to protect sensitive electronic components which are
connected to data and transmission lines from over
stress caused by ESD (Electrostatic Discharge).
PESDR3321P1A may be used to provide ESD protection
up to ±30KV (air and contact discharge) according to
IEC61000-4-2, and withstand peak pulse current up to
7A (8/ 20μs) according to IEC61000-4-5.
PESDR3321P1A is available in DFN1006-2 package.
Standard products are Pb-free and Halogen-free.
Features
Ultra small package: 1.0x0.6x0.5mm
Ultra low capacitance: 1pF typical
Operating voltage: 3.3V
Low clamping voltage
2-pin leadless package
Complies with following standards:
–IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
–IEC61000-4-5 (Lightning)7A (8/20μs)
RoHS Compliant
Dimensions and Pin Configuration
Mechanical Characteristics
Package: DFN1006-2 (1.0×0.6×0.5mm)
Case Material: “Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Marking Information: See Below
Applications
USB 2.0 and USB 3.0
HDMI 1.3, HDMI 1.4 and HDMI 2.0
SATA and ESATA interface
DVI
IEEE 1394
Portable Electronics and Notebooks
Marking Information
Ordering Information
Part Number
Packaging
Reel
Size
PESDR3311P1A
10000/Tape & Reel
7 inch
Circuit and Pin Schematic
Package Dimensions
3Y
1.0
0.6
0.5
PESDR3321P1A
Rev.04.2203
www.pn-silicon.com
Copyright © 2022 PN-Silicon Co., Ltd
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Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20μs)
P
PK
53
W
Peak Pulse Current (8/20μs)
I
PP
7
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
V
ESD
±30
±30
kV
Operating Temperature Range
T
OP
−55 to +125
℃
Storage Temperature Range
T
STG
−55 to +150
℃
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
V
RWM
3.3
V
Breakdown Voltage
V
BR
7.0
10.0
V
I
T
= 1mA
Reverse Leakage Current
I
R
50
nA
V
RWM
=3.3V
Clamping Voltage
3)
V
C
4.5
V
I
PP
= 1A (8/20μs pulse)
Clamping Voltage
3)
V
C
7.5
V
I
PP
= 7A (8/20μs pulse)
Junction Capacitance
C
J
1.0
pF
V
R
= 0V, f = 1MHz