PESDR3321P1
Rev.04.2202
www.pn-silicon.com
Copyright © 2022 PN-Silicon Co., Ltd
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1-Line Ultra Low Capacitance Bi-directional TVS Diode
Description
The PESDR3321P1 is a bi-directional TVS diode, to
provide fast response time and low ESD clamping
voltage,making this device an ideal solution for protecting
voltage sensitive high-speed data lines. The
PESDR3321P1 has an ultra-low capacitance with a
typical value at 0.35pF, and complies with the IEC
61000-4-2 (ESD) with ±20kV air and ±15kV contact
discharge. It is assembled into a DFN1006-2 lead-free
package. The small size, ultra-low capacitance and high
ESD surge protection make PESDR3321P1 an ideal
choice to protect cell phone, digital video interfaces and
other high speed ports.
Features
Ultra low capacitance: 0.35pF typical
Ultra low leakage: nA level
Operating voltage: 3.3V
Low clamping voltage
Complies with following standards:
–IEC 61000-4-2 (ESD) immunity test
Air discharge: ±20kV
Contact discharge: ±15kV
–IEC 61000-4-5 (Lightning) 4A (8/20μs)
RoHS Compliant
Dimensions and Pin Configuration
Mechanical Characteristics
Package: DFN1006-2 (1.0×0.6×0.5mm)
Case Material: “Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Marking Information: See Below
Applications
Cellular Handsets and Accessories
Display Ports
MDDI Ports
USB Ports
Digital Visual Interface (DVI)
PCI Express and Serial SATA Ports
Marking Information
Ordering Information
Part Number
Packaging
Reel
Size
PESDR3321P1
10000/Tape & Reel
7 inch
Package Dimensions
3L = Device Marking Code
3L
1.0
0.6
0.5
PESDR3321P1
Rev.04.2202
www.pn-silicon.com
Copyright © 2022 PN-Silicon Co., Ltd
2 / 5
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20μs)
P
PK
100
W
Peak Pulse Current (8/20μs)
I
PP
4
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
V
ESD
±20
±15
kV
Operating Temperature Range
T
J
−55 to +125
°C
Storage Temperature Range
T
STG
−55 to +150
°C
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
V
RWM
3.3
V
Breakdown Voltage
V
BR
5
V
I
T
= 1mA
Reverse Leakage Current
I
R
0.2
μA
V
RWM
= 3.3V
Clamping Voltage
V
C
11
V
I
PP
= 1A (8/20μs pulse)
Clamping Voltage
V
C
25
V
I
PP
= 4A (8/20μs pulse)
Junction Capacitance
C
J
0.35
pF
V
R
= 0V, f = 1MHz