1
N-Channel 40 V (D-S) MOSFET
FEATURES
• 100%R
g
andUISTested
• ComplianttoRoHSDirective2002/95/EC
APPLICATIONS
• PowerSupply
-SecondarySynchronousRectification
• DC/DCConverter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) I
D
(A) Q
g
(Typ.)
40
0.0127atV
GS
=10V
55
d
19.5
0.0147atV
GS
=4.5V
45
d
Notes:
a. Dutycycle≤1%.
b. SeeSOAcurveforvoltagederating.
c. Whenmountedon1"squarePCB(FR-4material).
d. Packagelimited.
ABSOLUTE MAXIMUM RATINGST
C
=25°C,unlessotherwisenoted
Parameter Symbol Limit Unit
Drain-SourceVoltage
V
DS
40
V
Gate-SourceVoltage
V
GS
±20
ContinuousDrainCurrent(T
J
=150°C)
T
C
=25°C
I
D
55
d
A
T
C
=70°C
45
d
PulsedDrainCurrent
I
DM
165
AvalancheCurrent
I
AS
34
SingleAvalancheEnergy
a
L=0.1mH
E
AS
78 mJ
MaximumPowerDissipation
a
T
C
=25°C
P
D
55.5
b
W
T
A
=25°C
c
2.7
OperatingJunctionandStorageTemperatureRange
T
J
,T
stg
-55to150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient(PCBMount)
c
R
thJA
54
°C/W
Junction-to-Case(Drain)
R
thJC
2.7
SG D
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DTU09N04
• DT-Trench Power MOSFET
2
Notes:
a. Pulsetest;pulsewidth≤300µs,dutycycle≤2%.
b. Guaranteedbydesign,notsubjecttoproductiontesting.
c. Independentofoperatingtemperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONST
J
=25°C,unlessotherwisenoted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-SourceBreakdownVoltage V
DS
V
DS
=0V,I
D
=250µA 40
V
GateThresholdVoltage V
GS(th)
V
DS
=V
GS
,I
D
=250µA 1 2.5
Gate-BodyLeakage I
GSS
V
DS
=0V,V
GS
=±20V ±250 nA
ZeroGateVoltageDrainCurrent I
DSS
V
DS
=30V,V
GS
=0V 1
µAV
DS
=30V,V
GS
=0V,T
J
=125°C 50
V
DS
=30V,V
GS
=0V,T
J
=150°C 250
On-StateDrainCurrent
a
I
D(on)
V
DS
≥10V,V
GS
=10V 55 A
Drain-SourceOn-StateResistance
a
R
DS(on)
V
GS
=10V
,
I
D
=22A
0.0127
Ω
V
GS
=4.5V,I
D
=20A 0.0147
ForwardTransconductance
a
g
fs
V
DS
=15V,I
D
=20A 100 S
Dynamic
b
InputCapacitance C
iss
V
GS
=0V,V
DS
=15V,f=1MHz
592
pFOutputCapacitance C
oss
376
ReverseTransferCapacitance C
rss
221
TotalGateCharge
c
Q
g
V
DS
=15V,V
GS
=10V,I
D
=20A 34 56
nC
V
DS
=15V,V
GS
=4.5V,I
D
=20A
20.1 30.2
Gate-SourceCharge
c
Q
gs
6
Gate-DrainCharge
c
Q
gd
5.7
GateResistance R
g
f=1MHz 0.4 2 4 Ω
Turn-OnDelayTime
c
t
d(on)
V
DD
=15V,R
L
=1.5Ω
I
D
≅10A,V
GEN
=10V,R
g
=1Ω
8 1
6
ns
RiseTime
c
t
r
9 18
Turn-OffDelayTime
c
t
d(off)
35 53
FallTime
c
t
f
9 18
Drain-Source Body Diode Ratings and CharacteristicsT
C
=25 °C
b
ContinuousCurrent I
S
55
A
PulsedCurrent I
SM
165
ForwardVoltage
a
V
SD
I
F
=10A,V
GS
=0V 0.75 1.5 V
ReverseRecoveryTime t
rr
I
F
=10A,dI/dt=100A/µs
3
4
51
ns
PeakReverseRecoveryCurrent I
RM(
REC)
2 3 A
Re
verseReco
v
e
r
y
Charge Q
rr
34 51 nC
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DTU09N04