PESDU0511P0A
Rev.04.2202
www.pn-silicon.com
Copyright © 2022 PN-Silicon Co., Ltd
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1-Line , Bi-directional , Transient Voltage Supperssor
Description
PESDU0511P0A is a bi-directional TVS (Transient
Voltage Suppressor). It has been specifically designed to
protect sensitive electronic components which are
connected to low speed data lines and control lines from
over-stress caused by ESD (Electrostatic Discharge) and
Lightning . PESDU0511P0A may be used to provide
ESD protection up to ±30KV (air and contact discharge)
according to IEC61000-4-2, and withstand peak pulse
current up to 7A(8/20μs) according to IEC61000-4-5 .
PESDU0511P0A is available in DFN0603-2 package.
Standard products are Pb-free and Halogen-free.
Features
Operating voltage: 5V
Low clamping voltage
2-pin leadless package
Complies with following standards:
—IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
—IEC61000-4-5 (Lightning) 7A (8/20μs)
RoHS Compliant
Dimensions and Pin Configuration
Mechanical Characteristics
Package: DFN0603-2 (0.6×0.3×0.3mm)
Case Material: “Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Marking Information: See Below
Applications
Cellular Handsets
USB V
BUS
and CC Line Protection
Microphone Line Protection
GPIO Protection
Marking Information
Ordering Information
Part Number
Shipping
PESDU0511P0A
10000/Tape & Reel
A5
A5
= Device Marking Code
Package Dimensions
Circuit and Pin Schematic
PESDU0511P0A
Rev.04.2202
www.pn-silicon.com
Copyright © 2022 PN-Silicon Co., Ltd
2 / 5
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20μs)
P
PK
84
W
Peak Pulse Current (8/20μs)
I
PP
7
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
V
ESD
±30
±30
kV
Operating Temperature Range
T
OP
−40 to ~85
℃
Storage Temperature Range
T
STG
−55 to ~150
℃
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
V
RWM
5
V
Breakdown Voltage
V
BR
5.3
V
I
T
= 1mA
Reverse Leakage Current
I
R
0.1
μA
V
RWM
=5V
Clamping Voltage
V
C
8
V
I
PP
= 1A(8/20μs pulse)
Clamping Voltage
V
C
12
V
I
PP
= 7A(8/20μs pulse)
Junction Capacitance
C
J
16
21
pF
V
R
= 0V, f = 1MHz