1
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free Option Availa
ble
• TrenchFET
®
Power MOSFET
APPLICATIONS
• Load Switch
for Portable Devices
PRODUCT SUMM
ARY
V
DS
(V) R
DS(on)
(��)
I
D
(A)
a, b
Q
g
(Typ.)
- 30
0.0
88 at V
GS
= -
10 V
- 2
.7
4.1 nC
0.130 at V
GS
= - 4.5 V - 2.2
G
TO-236
(SOT-23)
S
D
T op Vie
w
2
3
1
DTS3401
S
G
D
P-Channel MOSFET
Notes:
a.
Surfa
c
e Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C
, unless otherwise noted
Parameter Symbol Lim
it Unit
Drain-Source Voltage
V
DS
- 30
V
Gate-Source Vo
ltage
V
GS
± 20
Continuous Drain
Current (T
J
= 150 °C)
a, b
T
C
= 25 °C
I
D
- 3.5
A
T
C
= 70 °C
- 2.8
T
A
= 25 °C
- 2.7
a, b
T
A
= 70 °C
- 2.2
a, b
Pulsed Drain Cu
rrent (10 µs Pulse Width)
I
DM
- 12
Continuous Source-Dr
ain Diode Current
a, b
T
C
= 25 °C
I
S
- 1.5
T
A
= 25 °C
- 0.91
a, b
Maximu
m Power Dissipation
a, b
T
C
= 25 °C
P
D
1.8
W
T
C
= 70 °C
1.14
T
A
= 25 °C
1.1
a, b
T
A
= 70 °C
0.7
a, b
Operating J
unction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak T
emperature)
c
260
THERMAL RESISTANCE RATI
NGS
Parameter Symbol Typ
ical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 5 s
R
thJA
90 115
°C/W
Maximum J
unction-to-Foot (Drain) Steady State
R
thJF
55 70
RoHS
COMPLIANT
www.din-tek.jp
DTS3401
2
Notes
:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses be
yond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIF
ICATIONS T
J
= 25
°C, unless otherwise noted
Pa
rameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Volta
ge
V
DS
V
GS
= 0 V
,
I
D
= - 25
0 µA
- 30 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 32
mV/°C
V
GS(th)
T
emper
ature Coefficient ΔV
GS(th)
/T
J
4.5
Gate-Source Threshol
d Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3 V
Gate-S
ource Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
- 100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
- 1
µA
V
DS
= - 30 V, V
GS
= 0 V,
T
J
= 55 °C
- 10
On-State Dr
ain Current
a
I
D(
o
n
)
V
DS
≤ 5 V, V
GS
= - 10 V
- 6 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 3.5 A
0.073 0.088
Ω
V
GS
= - 4.5 V,
I
D
= - 2.5 A
0.110 0.138
F
orward Transconductance
a
g
fs
V
DS
= - 10 V
, I
D
= - 3.5 A
7S
Dy
nam
i
c
b
Input Capacitance
C
is
s
V
DS
= - 15 V
, V
GS
= 0 V,
f = 1 MHz
340
pFOutput Capacitance
C
oss
67
Reverse Tr
ansfer Capacitance
C
rss
51
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 2.5 A
4.1 6.2
nCGate-S
ource Charge
Q
gs
1.3
Gate-Drain
Charge
Q
gd
1.8
Gate Resi
stance
R
g
f = 1 MHz 10 Ω
Tur
n-On Delay Time
t
d(on)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
40 60
ns
Rise Time
t
r
40 60
Turn
-Off Delay Time
t
d(off)
20 40
Fall
Time
t
f
17 30
Turn
-On Delay Time
t
d(on
)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1 A, V
GEN
= - 10 V, R
g
= 1 Ω
5.5 10
Rise Time
t
r
13 25
Turn
-Off Delay Time
t
d(off)
17 30
Fall
Time
t
f
7.7 15
Drain-Sour
ce Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 1.
5
A
Pulse Diode Forward Current
I
SM
- 12
Body Diode Voltage
V
SD
I
S
= - 0.75 A, V
GS
= 0 V
- 0.8 - 1
.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 2.5 A, dI/dt = 100 A/µs
, T
J
= 25 °C
17 30 ns
Body Diode Re
verse Recovery Charge
Q
rr
11 20 nC
Re
verse Recovery Fall Time
t
a
12
ns
Reverse Recov
ery Rise Time
t
b
5
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DTS3401