1
P-Channel 60-V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
•
100
% UIS Tested
APPLICATIONS
• Lo
ad Switch
Notes:
a. Based on T
C
= 25
°C.
b. Surface mounted on 1" x 1" FR4 board.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a
Q
g
(Typ.)
- 60
0.01
95 at V
GS
= - 10 V
- 53
76 nC
0.0250 at V
GS
= - 4.5 V
- 42
TO-220AB
Top Vi
ew
GDS
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unle
ss otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source V
oltage
V
GS
± 20
Continuous Dr
ain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 53
a
A
T
C
= 70 °C
- 46.8
T
A
= 25 °C
9.2
b
T
A
= 70 °C
- 8.1
b
Pulsed Drai
n Current
I
DM
- 150
A
valanche Current Pulse
L = 0.1 mH
I
AS
- 45
Single Pulse Avalanche Energy
E
AS
101 mJ
Continuous Sou
rce-Drain Diode Current
T
C
= 25 °C
I
S
69
a
A
T
A
= 25 °C
2.1
b
Maxim
um Power Dissipation
T
C
= 25 °C
P
D
104.2
a
W
T
C
= 70 °C
66.7
a
T
A
= 25 °C
3.1
b
T
A
= 70 °C
2
b
Operating
Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RAT
INGS
Parameter Symbol T
ypical Maximum Unit
Maximum Junction-to-Ambient
b
Steady State
R
thJA
33 40
°C/
W
Maximum Junction-to-Case Steady State
R
thJC
0.98 1.2
DTP6006
www.din-tek.jp
2
Not
es:
a.
P
ulse test; pulse width 300 µs, duty cycle 2 %.
b.
Guaranteed by design, not subject to production testing.
Stresses
beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Pa
rameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown
Voltage
V
DS
V
GS
= 0 V,
I
D
= - 250 µA
- 60 V
V
DS
Temper
ature Coefficient V
DS
/T
J
I
D
= - 250 µA
68
mV/°C
V
GS(t
h)
Temper
ature Coefficient V
GS(t
h)
/T
J
- 5.2
Gate-S
o
urce Threshold Voltage
V
GS(t
h)
V
DS
= V
GS
, I
D
= - 250 µA
- 1
-
3 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V,
V
GS
= ± 2
0 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 60 V
, V
GS
= 0 V
- 1
µA
V
DS
= - 60 V
,
V
GS
= 0 V
,
T
J
= 55
°C
- 10
On-State
Drain Current
a
I
D(on
)
V
DS
=-5 V, V
GS
= - 10 V
- 120 A
Drain-Source On-State Re
sistance
a
R
DS(o
n)
V
GS
= - 10 V, I
D
= - 30 A
0.01
60 0.0195
V
GS
= - 4.5 V
, I
D
= - 20 A
0.0200
0.0250
Forward Transconductance
a
g
fs
V
DS
= - 15 V,
I
D
= - 50 A
20 S
Dynam
ic
b
Input Capacita
nce
C
iss
V
DS
= - 25 V
, V
GS
= 0 V,
f = 1 MHz
3500
pFOutput Capacitance
C
oss
390
Rev
erse Transfer Capacitance
C
rss
290
To
tal Gate Charge
Q
g
V
DS
= - 30 V,
V
GS
= - 10 V,
I
D
= - 55 A
76
115
nC
V
DS
= - 30 V, V
GS
= - 4.5 V
, I
D
=
- 55 A
38 60
Gate-Source Charge
Q
gs
16
Gate-Dr
ain Charge
Q
gd
19
Ga
te Resistance
R
g
f = 1 M
Hz 5.2
Tur n - O n D e l ay T i m e
t
d(o
n)
V
DD
= - 2 V
, R
L
= 2
I
D
- 10 A, V
GEN
= - 10 V
, R
g
= 1
10 15
ns
Rise Time
t
r
715
T
urn-Off Delay Time
t
d(off)
70
110
Fa
ll Time
t
f
40 60
Drain-
Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 69
A
Pulse Diode Forward Current
a
I
SM
- 150
Body Diode V
oltage
V
SD
I
S
= - 30 A
- 1
-
1.5 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 50
A, di/dt = 100 A/µs, T
J
= 25 °C
45
68 ns
Body Diode Reverse Recovery Charge
Q
rr
59 120
nC
Reverse Recovery Fall Time
t
a
29
ns
Re
v
erse Recovery Rise Time
t
b
16
DTP6006
www.din-tek.jp