SPECIALTY CHEMICALS AND ENGINEERED MATERIALS
Silicon Carbide
(SiC) Slurries
High performance slurries for scalable
manufacturing of low defectivity power
and semi-insulating SiC (silicon
carbide) substrates
Entegris is the market leader in SiC (silicon carbide) polishing
slurries that are designed to meet specifications at various
stages of the substrate manufacturing process from lapping
to CMP forSi-face, C-face, and poly SiC wafers.
Ouroptimized solutions for batch and single-wafer CMP
systems provide a low cost of ownership and our advanced
formulations provide an ultra-highpolishing rate- up to 10
times faster than existing processes - while
maintaininguniformity, zero sub-surface damage, and low
defectivity/scratches. Our slurries are high-volume
manufacturing (HVM) ready and compatible with bulk
delivery systems.Custom solutions are available upon
request.
APPLICATIONS
CMP/lapping of silicon carbide (SiC)•
Polish all surface types (lapped, mechanically polished, or
ground) into epi-ready condition
•
FEATURES & BENEFITS
High performance slurries
Achieve high removal rates with zero sub-surface damage and excellent stability
and dispersion
Slurry stability, clean efficiency,
and film properties
Enable high-volume manufacturing scale-up
Global manufacturing capabilities
Provide localized quick-turn and customized solutions
Customer collaboration
Slurry development begins with the customer's application requirements at the
forefront
Our applications engineers work with customers to ensure that chemistries are
optimized for target parameters and process conditions
Specifically designed for lapping or mechanically polishing SiC wafers.
2
SPECIFICATIONS
Slurry Process step Polishing
face best
optimized for
Key features Material
removal rate
(MRR)
Batch tool
slurries,
AF series,
SC1T series
Batch CMP Si-face Industry standard for batch CMP slurries
Optimized for batch polishing systems to
provide lowest COO and epi-ready
surface quality
1.5 -
2.5µm/hr
Single
wafer CMP
slurries,
CS GS
series,
SC200
series
Single wafer
CMP
Si-face Ultra-high removal slurries with low
defectivity and epi-ready surface finish
Optimized for single-wafer polishers
offering market-leadingCOO on various
CMP platforms for 6" and 8" SiC
substrates
8 - 10 µm/hr
Poly SiC
slurries,
SC3000
series
Bulk and final
CMP for poly
SiC substrates
Poly SiC Advanced particle and chemical
formulations specifically designed to
provide high removal rates and lowest
surface roughness on polycrystalline SiC
substrates
2 - 5 µm/hr
PERFORMANCE DATA