Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current – 1 A
MECHANICAL DATA
•
• Terminals: Solderable per MIL-STD-750, Method 2026
• pprox. Weight: 0.055g / 0.002oz
Case: SMA
A
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 1 A
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Maximum Average Forward Rectified Current
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta =125 °C
Typical Junction Capacitance
at V =4V, f=1MHz
R
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
T , T
j
stg
50 100 150 200 300 400
600
V
35 70 105 140 210 280 420
V
V
1
30
1
5
100
15
35
-55 ~ +150
A
A
V
μA
ns
°C
Symbols
Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
25 °C
Absolute Maximum Ratings and Characteristics
Maximum Reverse Recovery Time
t
rr
pF
ES1A ES1B ES1C ES1D ES1E ES1G ES1J
Units
50 100 150 200 300 400
600
1.25
1.70
FEATURES
For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
•
Typical Thermal Resistance
R
θJA
75
°C/W
（2）
（1���
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Top View
Marking Code: ES1A~ES1J
Simplified outline SMA and symbol
.
（2）
（1）Measured with I = 0.5 A, I = 1 A, I = 0.25 A
F R
rr
P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas.
1 2
ES1A THRU ES1J
50 ohm
Noninductive
25Vdc
approx
+
-
D.U.T
10 ohm
Noninductive
NonInductive
1 ohm
OSCILLOSCOPE
Note 1
PULSE
GENERATOR
Note 2
Note：1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
Fig.3 Typical Reverse Characteristics
I - Current ( A)
R
Reverse μ
20 10060
0
0.1
1.0
10
% of PIV.VOLTS
100
40 80
300
T =25
J
°C
T =75
J
°C
T =125
J
°C
-0.25
-1.0
0
+0.5
t
rr
10ns/div
Set time Base for 10ns/div
0.2
0.4
0.6
0.8
1.0
1.2
0.0
25 50
75
100 125 150 175
Average Forward Current (A)
Case Temperature (°C)
Fig.2 Maximum Average Forward Current Rating
Single phase half wave resistive or inductive
Fig.5 Typical Junction Capacitance
Junction Capacitance ( pF)
Reverse Voltage (V)
1
100
0.1
05
10
10
15
20
25
30
05
10
15
20
25
30
00
10 100
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak
A)Forward Surage Current (
Number of Cycles
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
35
Fig.4 Typical CharacteristicsForward
2.0 2.5
1.5
0
0.01
0.1
1.0
10
0.5 1.0
0.001
I
nstaneous Forward Current (A)
Instaneous Forward Voltage (V)
T =25
J
°C
ES1J
ES1E/ES1G
ES1A~ES1D
T =25
J
°C
f = 1.0MHz
V = 50mV
sig p-p
ES1A THRU ES1J