TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
TO-220-3L Plastic-Encapsulate Transistors
TIP31/31A/31B/31C
TRANSISTOR (NPN)
FEATURES
Medium Power Linear Switching Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified)
Parameter Symbol Test conditions Min M ax Unit
Collector-base breakdown voltage TIP31
TIP31A
TIP31B
TIP31C
V(BR)
CBO
I
C
= 1mA, I
E
=0
40
60
80
100
V
Collector-emitter breakdown voltage * TIP31
TIP31A
TIP31B
TIP31C
V
CEO(sus)
I
C
= 30mA, I
B
=0
40
60
80
100
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1mA, I
C
=0 5 V
Collector cut-off current TIP31
TIP31A
TIP31B
TIP31C
I
CBO
V
CB
=40V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
200 μA
Collector cut-off current TIP31/31A
TIP31B/31C
I
CEO
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3 mA
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 1 mA
h
FE(1)
V
CE
= 4V, I
C
= 1A 25
DC current gain
h
FE(2)
V
CE
=4 V, I
C
= 3A 15 75
Collector-emitter saturation voltage
V
CE(sat)
I
C
=3A, I
B
=0.375A 1.2 V
Base-emitter voltage
V
BE(on)
V
CE
= 4V, I
C
=3A 1.8 V
Transition frequency
f
T
V
CE
=10V , I
C
=0.5A 3 MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%.
Symbol Parameter TIP31 TIP31A TIP31B TIP31C Unit
V
CBO
Collector-Base Voltage 40 60 80 100 V
V
CEO
Collector-Emitter Voltage 40 60 80 100 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 3 A
P
C
Collector Power Dissipation 2 W
R
θJA
Thermal Resistance from Junction to Ambient 62.5
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55~+150
℃
1
1 10
10
100
1000
10 100
0
5
10
15
20
25
30
1E-3 0.01 0.1 1
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150
0
1
2
3
1E-4 1E-3 0.01 0.1 1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-4 1E-3 0.01 0.1 1
0
100
200
300
400
012345678
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2 0.3 0.4 0.5 0.6 0.7 0.8
1E-4
1E-3
0.01
0.1
1
20
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
TIP31/31A/31B/31C
Typical Characteristics
REVERSE VOLTAGE V (V)
CAPACITANCE C (pF)
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ib
C
ob
2000
500
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
V
CE
=10V
T
a
=25
o
C
I
C
f
T
——
3
V
CE
= 4V
T
a
=100
o
C
T
a
=25
o
C
COLLECTOR CURRENT I
C
(A)
DC CURRENT GAIN h
FE
I
C
h
FE
——
COLLECTOR POWER DISSIPATION
P
c
(W)
AMBIENT TEMPERATURE T
a
( )
℃
P
c
—— T
a
3
COLLECTOR CURRENT I
C
(A)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
T
a
=100
℃
β=8
I
C
V
BEsat
——
3
3
T
a
=25
℃
T
a
=100
℃
β=8
V
CEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
C
(A)
COMMON
EMITTER
T
a
=25
℃
20mA
18mA
16mA
14mA
12mA
10mA
8mA
6mA
4mA
I
B
=2mA
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
Static Characteristic
VCE=4V
Ta=25
℃
Ta=100
o
C
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(A)
V
BE
—— I
C
2
Typical Characteristics