NPN Silicon

Plastic-Encapsulate

Transistor

TO-92MOD

Features

• Capable of 0.9Watts of Power Dissipation.

• Collector-current 1.0A

• Collector-base Voltage 160V

• Operating and storage junction temperature range: -55

O

C to +150

O

C

OFF CHARACTERISTICS

V

(BR)CEO

Collector-Emitter Breakdown Voltage

(I

C

=10mAdc, I

B

=0)

160 Vdc

V

(BR)CBO

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

160 Vdc

V

(BR)EBO

Emitter-Base Voltage

(I

E

=10uAdc, I

C

=0)

6.0 Vdc

I

CBO

Collector Cutoff Current

(V

CB

=150Vdc, I

E

=0)

1.0 uAdc

I

CER

Collector Cutoff Current

(V

CB

=150Vdc, R

EB

=10m OHM)

10 uAdc

I

EBO

Emitter Cutoff Current

(V

EB

=6.0Vdc, I

C

=0)

1.0 uAdc

ON CHARACTERISTICS

h

FE(1)

DC Current Gain

(I

C

=200mAdc, V

CE

=5.0Vdc) 60 320

V

CE(sat)

Collector-Emitter Saturation Voltage

(I

C

=500mAdc, I

B

=50mAdc) 1.0 Vdc

V

BE

Base-Emitter Voltage

(I

C

=5.0mAdc, V

CE

=5.0Vdc) 0.75 Vdc

SMALL-SIGNAL CHARACTERISTICS

f

T

Transistor Frequency

(I

C

=200mAdc, V

CE

=5.0Vdc ) 20 MHz

CLASSIFICATION OF H

FE (1)

Rank R O Y

Range 60-120 100-200 160-320

A

B

C

D

E

F G

H

I

J

K

M

N

L

DIMENSIONS

INCHES MM

DIM MI N MAX MI N MAX NOTE

A --- .030 --- .750

B --- .039 --- 1.00

C --- .031 --- .80

D --- .024 --- 0.60

E --- .201 --- 5.10

F .050 1.27

G .050 1.27

H .100 2.54

I .039 1.00

J --- .087 --- 2.20

K --- .024 - - - .60

L -- - .323 --- 8.20

M --- .413 --- 10.50

N --- .161 --- 4.10

1

2

3

1.E

3.B

2.C

2SC2383-R

2SC2383-O

2SC2383-Y

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol Parameter Min Max Units

• Marking: C2383

• Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

• Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)