Rev.2.0, 20
Descri
p
WMOS
TM
j
unction
M
balance t
e
and low g
a
suitable f
o
power den
Feature
V
DS
=
7
Typ.
R
100%
Pb-fre
Applica
LED Lighti
Absolut
e
Drain-sour
c
Continuous
Pulsed drai
Gate-sourc
e
Avalanche
Avalanche
Avalanche
Power diss
i
Operating
a
Continuous
Diode puls
e
Thermal
C
Thermal re
s
Thermal re
s
20
p
tion
C4 is W
a
M
OSFET f
a
e
chnology f
o
a
te charge
or
applica
t
sity and ou
s
7
00V @ T
j
,
m
R
DS(on)
=0.9
6
UIS tested
e plating,
H
tions
ng, Charg
e
e
Maximu
m
Parame
t
c
e voltage
drain current
n current
2)
e
voltage
e
nergy, singl
e
e
nergy, repeti
c
urrent, repet
i
i
pation ( T
C
=
2
- De
r
a
nd storage t
e
diode forwar
d
e
current
C
haracte
r
Parame
t
s
istance, junc
t
s
istance, junc
t
a
yon’s 4
th
a
mily that
o
r extremel
y
performan
c
t
ions whic
h
tstanding e
m
ax
6
Ω
H
alogen fre
e
er
, Adapter,
m
Ratings
t
e
r
1)
( T
C
= 2
5
( T
C
= 10
0
e
pulse
3)
tive
2)
i
tive
2)
2
5°C )
r
ate above 25
e
mperature ra
n
d
current
r
istics
t
e
r
t
ion-to-case
t
ion-to-ambie
n
650
V
generatio
n
is utilizing
y
low on-r
e
c
e. WMOS
h
require
fficiency.
e
PC, LCD
T
Sym
V
D
S
5
°C )
0
°C )
I
D
I
D
M
V
G
E
A
E
A
I
A
R
°C
P
D
n
ge T
j
,
T
I
S
I
S,
pu
Sym
R
θ
J
n
t R
θ
J
Doc.W0
8
WMM
0
WMN
0
V
0.96Ω
S
n
super
charge
e
sistance
TM
C4 is
superior
T
V, Server
bol WMK
/
S
S
D
M
G
S
A
S
R
R
D
T
st
g
S
u
lse
bol WMK
/
J
C
J
A
8
65083
0
7N65C4,
0
7N65C4,
S
uper J
/
WMM/WMN
/W
42
0.34
-5
5
/
WMM/WMN/
W
3
62
TO-22
0
TO-2
6
R
c
o
G
D
G
WML07N
6
WMP07N
6
unction
W
MP/WMO
650
5
2.8
9
±30
15
0.1
0.7
5
to +150
5
9
W
MP/WMO
0
FT T
O
6
3 T
O
R
oHS
o
mpliant
D
S
S
G
6
5C4, W
M
6
5C4, W
M
Power
WML
23
0.18
WML
5.4
80
O
-262
O
-251
T
G
S
D
S
G
D
1 / 13
M
O07N65
C
M
K07N65
C
MOSFE
T
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Unit
°C/W
°C/W
T
O-220
T
O-252
S
G
D
S
G
D
C
4
C
4
T
Rev.2.0, 2
0
WMx0
7
Electrica
P
Static cha
r
Drain-sour
c
Gate thres
h
Drain cut-o
f
Gate leaka
g
Gate leaka
g
Drain-sour
c
Dynamic c
Input capa
c
Output cap
a
Reverse tr
a
Turn-on del
Rise time
Turn-off de
l
Fall time
Gate char
g
Gate to so
u
Gate to dra
Gate charg
e
Gate plate
a
Reverse di
Diode forw
a
Reverse re
c
Reverse re
c
Peak rever
s
Notes:
1. Limited by
T
2. Repetitive r
a
3. I
AS
= 0.7A,
V
0
20
7
N65C4
l Charact
e
P
aramete
r
r
acteristics
c
e breakdown
h
old voltage
f
f current
g
e current, fo
r
g
e current, re
v
c
e on-state re
s
haracteristic
s
c
itance
a
citance
a
nsfer capacit
a
ay time
l
ay time
g
e characteri
s
u
rce charge
in charge
e
total
a
u voltage
ode charact
e
a
rd voltage
c
overy time
c
overy charg
e
s
e recovery c
u
T
j max
. Maximum
a
ting: pulse wid
V
DD
= 50V, R
G
=
e
ristics
T
c
=
S
y
voltage
B
V
r
ward
I
v
erse
I
s
istance
R
s
a
nce
s
tics
V
e
ristics
e
u
rrent
duty cycle D=0
th limited by m
a
25Ω, starting
T
25°C, unless othe
r
y
mbol
B
V
DSS
V
GS
V
GS
(
th
)
V
DS
=
I
DSS
V
DS
=
T
j
=
T
j
=
I
GSSF
V
GS
I
GSSR
V
GS
R
DS(on)
V
GS
T
j
=
C
iss
V
DS
=
f =
1
C
oss
C
rss
t
d
(
on
)
V
DD
R
G
=
t
r
t
d
(
off
)
t
f
Q
g
s
V
DD
=
V
GS
Q
g
d
Q
g
V
p
lateau
V
SD
V
GS
t
r
r
V
R
=
dI
F
/d
Q
r
r
I
rrm
.5.
a
ximum junctio
n
T
j
= 25°C.
www.way-
o
r
wise noted
Test Condi
=0 V, I
D
=0.25
=
V
GS
, I
D
=0.25
=
650 V, V
GS
=
0
25°C
125°C
=20V, V
DS
=0
V
=-20V, V
DS
=0
V
=10 V, I
D
=1A
25°C
=
100V, V
GS
=
1
MHz
= 300V, I
D
=
2
=
25Ω, V
GS
=1
0
=
480V, I
D
=2
A
=0 to 10V
=0 V, I
F
=1A
50V, I
F
=2A,
d
t=100A/μs
n
temperature.
o
n.com
tion
mA
mA
0
V,
V
V
0V,
2
A
0
V
A
,
Min. T
y
650
2
-
-
3
-
-
-
- 0
.
- 2
-
9
-
0
-
-
-
3
-
- 1
-
2
-
5
-
5
-
-
8
-
0
-
7
y
p. Max
.
- -
3 4
-
3
0
1
-
- 100
- -100
.
96
1.14
30 -
9
.9 -
0
.8 -
7 -
7 -
3
4 -
8 -
.2 -
2
.2 -
5
.2 -
5
.2 -
- 1.2
8
2 -
0
.4 -
7
.5 -
2 / 13
.
Unit
V
V
μA
nA
nA
Ω
pF
ns
nC
V
V
ns
μC
A