STF7N65M2
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet
-
preliminary data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Excellent output capacitance (C
oss
) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated to an
improved vertical structure, the device exhibits
both low on-resistance and optimized switching
characteristics. It is therefore suitable for the most
demanding high efficiency converters.
TO-220FP
1
2
3
AM15572v1
Order code V
DS
R
DS(on)
max
I
D
STF7N65M2 650 V 1.15 Ω 5 A
Table 1. Device summary
Order code Marking Package Packaging
STF7N65M2 7N65M2 TO-220FP T ube
STF7N65M2 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source volt ag e ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 5
(1)
1. Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C 3.2
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area.
Dra in c urre nt (pulsed) 20
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 20 W
V
ISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s; T
C
=25 °C)
2500 V
dv/dt
(3)
3. I
SD
≤ 5 A, di/dt ≤ 400 A/µs; V
DS
peak
< V
(BR)DSS
, V
DD
=400 V
Peak diode recovery voltage slope 15
V/ns
dv/dt
(4)
4. V
DS
≤ 520 V
MOSFET dv/d t rugg edn es s 50
T
stg
Storage temperature
- 55 to 150 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal res istance junction-case max 6.25 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive (pulse width
limited by T
jmax
)
1A
E
AS
Single pulse avalanche energy (starting T
j
=25°C, I
D
= I
AR
;
V
DD
=50)
103 mJ