MEMORY MODULE
DDR3 SDRam 512Mx32-FBGA
DDR3 Memory Module
PRELIMINARY 3D PLUS SA reserves the right to cancel product or specifications without notice
3DFP-0650-REV 0-5 – MAY 2016
DDR3 Synchronous Dynamic Ram
3D3D16G32WB2650
16Gbit DDR3 SDRam organized as 512Mx32
Pin Assignment (Top View)
FBGA 136 (Pitch : 0.80 mm)
FUNCTIONAL Block Diagram
(All other signals are common to the devices)
Features and Benefits
- Industry standard ball-out
- Combines two 8Gb x16 devices in one package
- Vdd=VddQ = +1.5V
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- 8 internal banks per memory
- Nominal and dynamic on-die termination
- Programmable CAS latency
- Posted CAS additive latency
- Fixed burst lengths of 8 and burst chop (BC) of 4
- Selectable BC4 or BL8 on-the-fly
- Self refresh mode
- Write leveling
- Multipurpose register
- Output driver calibration
- Clock rate available : 1066 and 1333 Mbps
- Industrial and Military temperature range.
General description
3D Plus offers a new 16Gbit DDR3 SDRAM cube
compatible with the industry standard footprint.
This product embeds 2 chips with a capacity of 8Gb
(512Mx16) each.
Our products are available at 1066 and 1333 Mbps in
Industrial and Military temperature range.
Thanks to the high density patented technology the
memories are embedded in a small form factor device
without compromising electrical or thermal performance.
This device is ideal for high density memory applications
that require high speed transfer and compatibility with
standard servers and networking equipment.
Main applications:
Embedded Systems
Workstations
Servers
Super Computers
Test Systems
256Mx16
256Mx16
DM[3 :2]
DQS[3 :2]
DQS[3 :2]#
DQ[31 :16]
ZQ1
512Mx16
1
DM[1 :0]
DQS[1 :0]
DQS[1 :0]#
DQ[15 :0]
ZQ0
MEMORY MODULE
DDR3 SDRam 512Mx32-FBGA
DDR3 Memory Module
PRELIMINARY 3D PLUS SA reserves the right to cancel product or specifications without notice
3DFP-0650-REV 0-5 – MAY 2016
DDR3 Synchronous Dynamic Ram
3D3D16G32WB2650
16Gbit DDR3 SDRam organized as 512Mx32
ABSOLUTE MAXIMUM DC RATINGS
Parameter
Symbol
Min
Max
Unit
Voltage on any ball relative to V
SS
V
IN
, V
OUT
-0.4
+1.87
V
Input Leakage Current
Ii
-4
+4
µA
Vref Supply Leakage Current
IVref
-2
+2
µA
Storage temperature
T
STG
-65
+150
°C
DC OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
DD
1.425
1.575
V
I/O Supply Voltage
V
DDQ
1.425
1.575
V
3D3D16G32WB2650 XX
Temperature Range
IB = -40°C ~ +85°C
MB = -55°C + 125°C
Main Sales Office:
FRANCE
3D PLUS
408, rue Hélène Boucher ZI.
78532 BUC Cedex
Tel : 33 (0)13 0 83 26 50
Fax : 33 (0)1 39 56 25 89
Web : www.3d-plus.com
e-mail : sales@3d-plus.com
DISTRIBUTOR
USA
3D PLUS USA, Inc
910 Auburn Court
Fremont, CA 94538
Tel : (510) 824-5591
Tel : (510) 824-5591
e-mail : sales@3d-plus.com
Electrical Characteristics
Parameter
Symbol
Value
Unit
Operating Current (one bank active)
I
DD1
258
mA
Precharge Power Down Current
I
DD2P0
70
mA
Room Temp Self Refresh
I
DD6
116
mA
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS"
are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could
affect device reliability