JMPFP7N65G1
JieJie Microelectronics CO. , Ltd Version: 1.0
- 1 -
Package Marking and Ordering Information
Device Marking Device OUTLINE
Device Package
TUBE
(PCS)
Inner Box
(PCS)
Per Carton
(PCS)
JMPFP7N65G1 JMPFP7N65G1
TUBE TO-220FA 50 1,000 5,000
Absolute Maximum Ratings (T
C
=25℃ unless otherwise specified)
Symbol Parameter Max. Units
V
DSS
Drain-Source Voltage
650 V
V
GSS
Gate-Source Voltage ±30 V
I
D
Continuous Drain Current
T
C
= 25℃ 7 A
T
C
= 100℃
4.5 A
I
DM
Pulsed Drain Current
note1
28 A
E
AS
Single Pulsed Avalanche Energy
note2
198 mJ
P
D
Power Dissipation T
C
= 25℃ 63 W
R
θJC
Thermal Resistance, Junction to Case 1.98 ℃/ W
R
θJA
Thermal Resistance, Junction to Ambient 62.5 ℃/ W
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 ℃
JMP N-channel Enhancement Mode Power MOSFET
Features
650V, 7A
R
DS(ON)
< 1.35Ω @ V
GS
= 10V
Fast Switching
Improved dv/dt Capability
Application
Load Switch
PWM Application
Power management
100% UIS TESTED!
100% ΔVds TESTED!
TO-220FA top view Marking and pin Assignment Schematic Diagram
JMPFP7N65G1
JieJie Microelectronics CO. , Ltd Version: 1.0
- 2 -
Electrical Characteristics (T
J
=25℃ unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max.
Units
Off Characteristic
V
(BR)DSS
Drain-Source Breakdown Voltage V
GS
= 0V,I
D
= 250μA 650 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 650V,
V
GS
= 0V, T
J
= 25℃
- - 1 μA
I
GSS
Gate to Body Leakage Current V
GS
= ±30V - - ±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
,I
D
= 250μA 2 - 4 V
R
DS(on)
Static Drain-Source On-Resistance
note3
V
GS
= 10V, I
D
= 3.5A
- 1.1 1.35 Ω
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
- 1148
- pF
C
oss
Output Capacitance - 106 - pF
C
rss
Reverse Transfer Capacitance - 12 - pF
Q
g
Total Gate Charge
V
DS
=520V, I
D
=7A,
V
GS
= 10V
- 22 - nC
Q
gs
Gate-Source Charge - 4.3 - nC
Q
gd
Gate-Drain(“Miller”) Charge - 13 - nC
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 325V, I
D
=7A,
R
G
= 25Ω
- 15 - ns
t
r
Turn-On Rise Time - 18 - ns
t
d(off)
Turn-Off Delay Time - 80 - ns
t
f
Turn-Off Fall Time - 35 - ns
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward
Current
- - 7 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 28 A
V
SD
Drain to Source Diode Forward
Voltage
V
GS
= 0V, I
SD
= 7A,
T
J
= 25℃
- - 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 7A,
di/dt =100A/μs
- 300 - ns
Q
rr
Reverse Recovery Charge - 4.1 - μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS condition: T
J
= 25°C, V
DD
= 50V, V
G
= 10V, L= 10mH, I
AS
= 6.3A
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%