DDR3 SDRAM MEMORY

3D3D16G72WB2768

Datasheet

DDR3 SDRAM Memory

3D3D16G72WB2768 3D PLUS SA reserves the right to cancel product or specifications without notice

3DDS-0768-REV 3 – APRIL 2021

Page: 1/ 15

FEATURES

 Unbuffered DDR3 “SO-DIMM” SDRAM 72b in

a 223 BGA package ( pitch of 1 mm) : 27.20x18x4.4mm

 Organized as a single bank of 256Mx72 bits

 16Gb for data on a 64-bit bus and 2Gb for ECC

 VDD/VDDQ = 1.5V±0.075V

 DDR3L support VDD/VDDQ= 1.35V

 Support ECC error detection and correction

 Fully differential clock inputs (CK, CK#) operation

 Programmable CAS Latency

 Sequential & Interleaved Burst type available both

for 8 & 4 with BC

 Selectable BC4 or BL8 on the fly

 On Die Termination (ODT)

 Auto Refresh and Self Refresh

 High Temperature Self-Refresh rate enable

 ZQ calibration for DQ drive and ODT

 Single rank

 Fly-by topology

 Terminated control, command and address buses

 RESET pin for initialization and reset function

 Fast data transfer rate available : PC3-6400, PC38500

and PC3-10600

 Industrial and Military temperature range.

 Leaded solder balls

 Refresh time of 8192-cycle at TC temperature range:

o 64ms at –55°C to 85°C

o 32ms at 85°C to 95°C

o 16ms at 95°C to 105°C

o 8ms at 105°C to 125°C

Applications:

- Embedded Systems

- Single board computers

- High performance computers

- Test Systems

DDR3 SDRAM MEMORY

3D3D16G72WB2768

Datasheet

DDR3 SDRAM Memory

3D3D16G72WB2768 3D PLUS SA reserves the right to cancel product or specifications without notice

3DDS-0768-REV 3 – APRIL 2021

Page: 2/ 15

GENERAL DESCRIPTION

The 3D3D16G72WB2768 is a highly integrated module operating as a DDR3 SDRAM 72b SO-DIMM in a

BGA package. It is intended for use as main memory when installed in embedded systems.

It offers a memory density of 16Gbits with ECC on a 72 bits data bus in a single rank of 256Mbx72 high

speed memory array. It is based on 5 dies achieving high speed double-data-rate transfer rates of up to

1333 Mb/sec/pin for general applications. The module is designed to comply with the following key DDR3

SO-DIMM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die

Termination (4) programmable driver strength data, (5) seamless BL4 access.

All the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are

synchronized with a pair of bidirectional differential data strobes (DQS and DQS#) in a source synchronous

fashion. The address bus is used to convey row, column and bank address information in a RAS# and

CAS# multiplexing style.

The 16Gb DDR3 device operates with a single power supply: 1.5V VDD (or 1.35V in DDR3L mode).

This device is ideal for high density memory applications that require high speed transfer and compatibility

with standard processors, DSP or FPGAs.