◎ SEMIHOW REV.A2,October 2018
HTB1A80AS
FEATURES
Repetitive Peak Off-State Voltage : 800V
R.M.S On–State Current (I
T(RMS)
= 1A)
Gate Trigger Current : 7mA
dv/dt ≥ 400V/μs
General Description
High ability to withstand the shock loading of large current provide high
dv/dt rate with strong resistance to electromagnetic interference.
They are especially recommended for use on inductive load and serious
electromagnetic interference place.
HTB1A80AS
1A TRIAC AC Switches
V
DRM
= 800V
I
T(RMS)
= 1 A
I
TSM
= 10 A
I
GT(max)
= 7mA
Absolute Maximum Ratings (T
J
=25℃ unless otherwise specified )
Symbol Parameter Value Unit
V
DRM
Repetitive Peak
Off-State Voltage 800 V
V
RRM
Repetitive
Peak Reverse Voltage 800 V
V
DSM
Non Repetitive
Surge Peak Off-State Voltage V
DRM
+100 V
V
RSM
Non Repetitive Peak Reverse Voltage
V
RRM
+100 V
I
T(RMS)
R.M.S. On
-State Current (T
C
=57℃) 1 A
I
TSM
Surge On
-State Current (full cycle, f=50Hz) 10 A
I
2
t
Fusing Current (
tp=10ms) 1.12 A
2
S
di/dt
Critical Rate of Rise of On
-State Current (I
G
=2×I
GT
)
50 A/μs
I
GM
Peak Gate Current
1 A
P
G(AV)
Average Gate Power Dissipation
0.2 W
P
GM
Peak
Gate Power Dissipation 1 W
T
J
Operating
Junction Temperature -40~+125
o
C
T
STG
Storage
Temperature -40~+150
o
C
TO-92
G
T1
T2
Symbol
◎ SEMIHOW REV.A2,October 2018
HTB1A80AS
Electrical Characteristics (T
J
=25℃ unless otherwise specified )
Symbol
Parameter Conditions Value Unit
I
GT
Gate Trigger Current
V
D
= 12V, R
L
=33Ω Ⅰ-Ⅱ-Ⅲ MAX 7 mA
V
GT
Gate Trigger Voltage
V
D
= 12V, R
L
=33Ω Ⅰ-Ⅱ-Ⅲ MAX 1.4 V
V
GD
Non
-Trigger Gate Voltage
1
V
D
= V
DRM
, R
L
=3.3K
Ω,
T
J
=125
o
C
Ⅰ-Ⅱ-Ⅲ MIN 0.2 V
I
L
Latching current
I
G
= 1.2I
GT
Ⅰ-Ⅲ
MAX
15
mA
Ⅱ 25
I
H
Holding current
I
T
= 100mA MAX 10 mA
dv/dt
Critical Rate of Rise
of Off-State
Voltage
V
D
= 2/3 V
DRM
, Gate Open,
T
J
=125
o
C
MIN 400 V/μs
(
dv/dt
)c
Critical Rate of Decay
of Off-
State
Commutating Voltage
2
T
J
=125
o
C MIN 2 V/μs
Symbol
Parameter Conditions Value (MAX) Unit
V
TM
Peak On
-State Voltage
I
T
= 1.4A, tp= 380μs 1.5 V
I
DRM
Repetitive Peak
Off-State Current
V
D
= V
DRM,
V
R
= V
RRM
T
J
=25
o
C 10 μA
I
RRM
Repetitive
Peak Reverse Current
T
J
=125
o
C 0.5 mA
Thermal Characteristics
Symbol
Parameter Conditions Value Unit
R
θJC
Thermal Resistance
Junction to Case
(AC) 60
o
C/W
Static Characteristics
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
2. Test conditions of the critical-rate of decay of off-state commutation Voltage is shown in the table below.
Test Conditions
Commutating Voltage and Current Waveforms
(inductive load)
1. Junction Temperature
T
J
= 125
o
C
2. Peak Off
-State Voltage
V
D
= 400V
3. Rate of
decayof on-State Commutating current
(di/dt)c= -0.5A/ms