◎ SEMIHOW REV.A3,April 2021
HTB1A60_HTB1A80
FEATURES
• Repetitive Peak Off-State Voltage : 600V/800V
• R.M.S On–State Current (I
T(RMS)
= 1A)
• Sensitive Gate Trigger Current
- 5[mA] of IGT at I, II and III Quadrants.
- 12[mA] of IGT at IV Quadrant.
Applications
AC power or phase control through low output current of MCU or IC
suck like Heater, Solenoid valve control, etc.
General Description
Semihow’s sensitive TRIAC product is a glass passivated device,
has a low gate trigger current, high stability in gate trigger current to
variation of operating temperature and high off state voltage. It is
generally suitable for power and phase control in ac application.
HTB1A60/HTB1A80
4 Quadrants Sensitive TRIAC
V
DRM
= 600V/800V
I
T(RMS)
= 1 A
I
TSM
= 13 A
I
GT
= 5mA/12mA
Symbol
Absolute Maximum Ratings (T
J
=25℃ unless otherwise specified )
Symbol
Parameter Conditions
Ratings
Unit
HTB1A60 HTB1A80
V
DRM
Repetitive Peak
Off-State Voltage
Sine wave, 50/60Hz, Gate open
600 800 V
V
RRM
Repetitive
Peak Reverse Voltage 600 800 V
I
T(AV)
Average On
-State Current
Full sine wave, T
C
= 72
o
C
0.9 A
I
T(RMS)
R.M.S. On
-State Current 1 A
I
TSM
Surge On
-State Current
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
12/13 A
I
2
t
Fusing Current
t = 10ms
0.7 A
2
S
P
GM
Forward Peak
Gate Power
Dissipation
T
J
= 125 °C
2 W
P
G(AV)
Forward
Average Gate Power
Dissipation
T
J
= 125 °C, over any 20ms
0.2 W
I
FGM
Forward
Peak Gate Current
T
J
= 125 °
C, pulse width ≤ 20us
0.5 A
V
RGM
Reverse
Peak Gate Voltage
T
J
= 125 °
C, pulse width ≤ 20us
6 V
T
J
Operating
Junction Temperature -40~+125
o
C
T
STG
Storage
Temperature -40~+150
o
C
TO-92
G
T1
T2
◎ SEMIHOW REV.A3,April 2021
HTB1A60_HTB1A80
Thermal Characteristics
Electrical Characteristics (T
J
=25℃ unless otherwise specified )
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Symbol
Parameter Conditions Min Typ Max Unit
I
DRM
Repetitive Peak
Off-State Current
V
D
= V
DRM
T
J
=25
o
C - - 50 uA
T
J
=125
o
C
- - 5 mA
I
RRM
Repetitive
Peak Reverse Current
V
D
= V
DRM
T
J
=25
o
C - - 50 uA
T
J
=125
o
C
- - 5 mA
I
GT
Gate Trigger Current
V
D
= 12V, R
L
=330Ω
1+, 1-, 3- - - 5 mA
3+ - - 12 mA
V
GT
Gate Trigger Voltage
V
D
= 12V, R
L
=330Ω
1+, 1-, 3- - - 1.5 V
3+ - - 2.0 V
V
GD
Non
-Trigger Gate Voltage
1
D
= 12V, R
L
=330Ω, T
J
=125
o
C 0.2 - - V
V
TM
Peak On
-State Voltage
T
= 1.4A, I
G
= 20mA - 1.2 1.6 V
dv/dt
Critical Rate of Rise
of Off-State
Voltage
D
= 2/3 V
DRM
, T
J
=125
o
C 10 - - V/us
I
H
Holding current
T
= 0.2A - - 5 mA
Symbol
Parameter Conditions Min Typ Max Unit
R
θJC
Thermal Resistance Junction to Case 48
o
C/W
R
θJA
Thermal Resistance Junction to Ambient 150
o
C/W